Authors: Ivanov, DY Volkov, VA Dubrovskii, YV Takhtamirov, EE Vdovin, EE Eaves, L Main, PC Henini, M Maude, DK Portal, JC Maan, JC Hill, G

Citation: Dy. Ivanov et al., Anti-crossing of Landau levels of different two-dimensional subbands in GaAs in normal magnetic field, PHYSICA B, 298(1-4), 2001, pp. 359-363

Authors: Takhtamirov, EE Volkov, VA

Citation: Ee. Takhtamirov et Va. Volkov, Method of envelope functions and intervalley Gamma-X-z interaction of states in (001) III-V semiconductor heterostructures, J EXP TH PH, 90(6), 2000, pp. 1063-1070

Authors: Takhtamirov, EE Volkov, VA

Citation: Ee. Takhtamirov et Va. Volkov, Orientational pinning of the striped phase in a quantum hall liquid, JETP LETTER, 71(10), 2000, pp. 422-425

Authors: Takhtamirov, EE Volkov, VA

Citation: Ee. Takhtamirov et Va. Volkov, Generalization of the effective mass method for semiconductor structures with atomically sharp heterojunctions, J EXP TH PH, 89(5), 1999, pp. 1000-1014

Authors: Takhtamirov, EE Volkov, VA

Citation: Ee. Takhtamirov et Va. Volkov, The problem of effective-mass method for semiconductor nanostructures withatomically abrupt heterointerfaces, PHYS LOW-D, 3-4, 1999, pp. 203-208