Authors: Furukawa, T Nakahata, T Maruno, S Tanimura, J Tokuda, Y Satoh, S

Citation: T. Furukawa et al., Surface defect formation in epitaxial Si grown on boron-doped substrates by ultrahigh vacuum chemical vapor deposition, JPN J A P 2, 40(10A), 2001, pp. L1051-L1053

Authors: Nakahata, T Yamamoto, K Tanimura, J Inagaki, T Furukawa, T Maruno, S Tokuda, Y Miyamoto, A Satoh, S Kiyama, H

Citation: T. Nakahata et al., Low thermal budget surface cleaning after dry etching for selective silicon epitaxial growth, J CRYST GR, 226(4), 2001, pp. 443-450

Authors: Tuda, M Shintani, K Tanimura, J

Citation: M. Tuda et al., Study of plasma-surface interactions during overetch of polycrystalline silicon gate etching with high-density HBr/O-2 plasmas, APPL PHYS L, 79(16), 2001, pp. 2535-2537

Authors: Tanimura, J Wada, O Kurokawa, H Furuse, N Kobayashi, M

Citation: J. Tanimura et al., Characterization of single grain boundaries in a Bi-doped ZnO varistor using a focused ion beam system, JPN J A P 1, 39(7B), 2000, pp. 4493-4496

Authors: Kawase, K Tanimura, J Kurokawa, H Kobayashi, K Teramoto, A Ogata, T Inoue, M

Citation: K. Kawase et al., Angle resolved X-ray photoelectron spectroscopic study of ultrathin oxynitrides, MAT SC S PR, 2(3), 1999, pp. 225-231