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Citation: M. Kasu et al., Formation of solid solution of Al1-xSixN (0 < x <= 12%) ternary alloy, JPN J A P 2, 40(10A), 2001, pp. L1048-L1050

Authors: Taniyasu, Y Yoshikawa, A

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Authors: Taniyasu, Y Suzuki, K Lim, DH Jia, AW Shimotomai, M Kato, Y Kobayashi, M Yoshikawa, A Takahashi, K

Citation: Y. Taniyasu et al., Cubic InGaN/GaN double-heterostructure light emitting diodes grown on GaAs(001) substrates by MOVPE, PHYS ST S-A, 180(1), 2000, pp. 241-246

Authors: Kazama, T Yasunaga, F Taniyasu, Y Jia, A Kato, Y Kobayashi, M Yoshikawa, A Takahashi, K

Citation: T. Kazama et al., Cross-sectional scanning tunneling microscopy characterization of cubic GaN epilayers grown on (001) GaAs, PHYS ST S-A, 180(1), 2000, pp. 345-350

Authors: Taniyasu, Y Watanabe, Y Lim, DH Jia, AW Shimotomai, M Kato, Y Kobayashi, M Yoshikawa, A Takahashi, K

Citation: Y. Taniyasu et al., Structural defects of cubic InGaN/GaN heterostructure grown on GaAs(001) substrate by MOVPE, PHYS ST S-A, 176(1), 1999, pp. 397-400