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Results: 1-25 | 26-26 |
Results: 26-26/26
Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinalGaAs(001) surfaces misoriented in the [010] direction in the active region
Authors: Evtikhiev, VP Kudryashov, IV Kotel'nikov, EY Tokranov, VE Titkov, AN Tarasov, IS Alferov, ZI
Citation: Vp. Evtikhiev et al., Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinalGaAs(001) surfaces misoriented in the [010] direction in the active region, SEMICONDUCT, 32(12), 1998, pp. 1323-1327
Risultati: 1-25 | 26-26 |