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Citation: Jm. Feng et al., Optical transitions of Al0.35Ga0.65As/GaAs asymmetric double quantum wellsgrown on GaAs(n11)A (n <= 4) substrates, MICROELEC J, 30(4-5), 1999, pp. 433-437

Authors: Ohachi, T Feng, JM Asai, K Uwani, M Tateuchi, M Vaccaro, PO Fujita, K

Citation: T. Ohachi et al., Arsenic vapor pressure dependence of surface morphology and silicon dopingin molecular beam epitaxial grown GaAs (n11)A (n = 1-4) substrates, MICROELEC J, 30(4-5), 1999, pp. 471-476

Authors: Ohachi, T Feng, JM Asai, K Uwani, M Tateuchi, M Vaccaro, PO Fujita, K

Citation: T. Ohachi et al., MBE growth of AlGaAs GaAs heterostructure and silicon doping on GaAs(n 1 1)A (n=1-4) substrates, J CRYST GR, 202, 1999, pp. 226-231

Authors: Koizumi, K Vaccaro, PO Fujita, K Tateuchi, M Ohachi, T

Citation: K. Koizumi et al., Lateral wet oxidation of AlAs layer in GaAs/AlAs heterostructures grown byMBE on GaAs (n 1 1)A substrates, J CRYST GR, 199, 1999, pp. 1136-1140