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Results: 1-9 |
Results: 9
The role of internal electric fields in III-N quantum structure
Authors: Perlin, P Lepkowski, SP Teisseyre, H Suski, T
Citation: P. Perlin et al., The role of internal electric fields in III-N quantum structure, ACT PHY P A, 100(2), 2001, pp. 261-270
Optical and electrical properties of Be doped GaN bulk crystals
Authors: Suski, T Litwin-Staszewska, E Perlin, P Wisniewski, P Teisseyre, H Grzegory, I Bockowski, M Porowski, S Saarinen, K Nissila, J
Citation: T. Suski et al., Optical and electrical properties of Be doped GaN bulk crystals, J CRYST GR, 230(3-4), 2001, pp. 368-371
Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells
Authors: Lepkowski, SP Teisseyre, H Suski, T Perlin, P Grandjean, N Massies, J
Citation: Sp. Lepkowski et al., Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells, APPL PHYS L, 79(10), 2001, pp. 1483-1485
The influence of erbium on the physical properties of GaN crystals grown from N solution in Ga at high nitrogen pressure
Authors: Teisseyre, H Ochalski, TJ Perlin, P Suski, T Leszczynski, M Grzegory, I Bockowski, M Lucznik, B Bugajski, M Palczewska, M Gebicki, W
Citation: H. Teisseyre et al., The influence of erbium on the physical properties of GaN crystals grown from N solution in Ga at high nitrogen pressure, HIGH PR RES, 18(1-6), 2000, pp. 35-39
Different character of the donor-acceptor pair-related 3.27 eV band and blue photoluminescence in Mg-doped GaN. Hydrostatic pressure studies
Authors: Teisseyre, H Suski, T Perlin, P Grzegory, I Leszczynski, M Bockowski, M Porowski, S Freitas, JA Henry, RL Wickenden, AE Koleske, DD
Citation: H. Teisseyre et al., Different character of the donor-acceptor pair-related 3.27 eV band and blue photoluminescence in Mg-doped GaN. Hydrostatic pressure studies, PHYS REV B, 62(15), 2000, pp. 10151-10157
High pressure fabrication and processing of GaN : Mg
Authors: Suski, T Jun, J Leszczynski, M Teisseyre, H Grzegory, I Porowski, S Dollinger, G Saarinen, K Laine, T Nissila, J Burkhard, W Kriegseis, W Meyer, BK
Citation: T. Suski et al., High pressure fabrication and processing of GaN : Mg, MAT SCI E B, 59(1-3), 1999, pp. 1-5
Annealing of gallium nitride under high-N-2 pressure
Authors: Porowski, S Jun, J Krukowski, S Grzegory, I Leszczynski, M Suski, T Teisseyre, H Foxon, CT Korakakis, D
Citation: S. Porowski et al., Annealing of gallium nitride under high-N-2 pressure, PHYSICA B, 265(1-4), 1999, pp. 295-299
Changes in the microstructure of GaN layers on sapphire upon annealing at high pressure
Authors: Domagala, J Leszczynski, M Suski, T Jun, J Prystawko, P Teisseyre, H
Citation: J. Domagala et al., Changes in the microstructure of GaN layers on sapphire upon annealing at high pressure, THIN SOL FI, 350(1-2), 1999, pp. 295-299
Epitaxy of ternary nitrides on GaN single crystals
Authors: Prystawko, P Leszczynski, M Sliwinski, A Teisseyre, H Suski, T Bockowski, M Porowski, S Domagala, J Kirchner, C Pelzmann, A Schauler, M Kamp, M
Citation: P. Prystawko et al., Epitaxy of ternary nitrides on GaN single crystals, J CRYST GR, 199, 1999, pp. 1061-1065
Risultati: 1-9 |