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The growth and electrical properties of silicon on GaAs(110) studied by scanning tunneling microscopy and scanning tunneling spectroscopy
Authors: Dunstan, PR Wilks, SP Teng, KS Pritchard, MA Williams, RH
Citation: Pr. Dunstan et al., The growth and electrical properties of silicon on GaAs(110) studied by scanning tunneling microscopy and scanning tunneling spectroscopy, J APPL PHYS, 86(10), 1999, pp. 5636-5641
The electronic passivation properties of Si nanoislands on GaAs(110) step defects induced by cleaving
Authors: Teng, KS Dunstan, PR Wilks, SP Williams, RH
Citation: Ks. Teng et al., The electronic passivation properties of Si nanoislands on GaAs(110) step defects induced by cleaving, APPL PHYS L, 75(17), 1999, pp. 2590-2592
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