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Results: 1-7 |
Results: 7
Oxygen adsorption on the (110)-oriented diamond surface
Authors: Mackey, BL Russell, JN Crowell, JE Pehrsson, PE Thoms, BD Butler, JE
Citation: Bl. Mackey et al., Oxygen adsorption on the (110)-oriented diamond surface, J PHYS CH B, 105(18), 2001, pp. 3803-3812
Characterization of high density CH4/H-2/Ar plasmas for compound semiconductor etching
Authors: Eddy, CR Leonhardt, D Douglass, SR Shamamian, VA Thoms, BD Butler, JE
Citation: Cr. Eddy et al., Characterization of high density CH4/H-2/Ar plasmas for compound semiconductor etching, J VAC SCI A, 17(3), 1999, pp. 780-792
Characterization of Cl-2/Ar high density plasmas for semiconductor etching
Authors: Eddy, CR Leonhardt, D Douglass, SR Thoms, BD Shamamian, VA Butler, JE
Citation: Cr. Eddy et al., Characterization of Cl-2/Ar high density plasmas for semiconductor etching, J VAC SCI A, 17(1), 1999, pp. 38-51
Electronic structure of H/GaN(0001): An EELS study of Ga-H formation
Authors: Bellitto, VJ Thoms, BD Koleske, DD Wickenden, AE Henry, RL
Citation: Vj. Bellitto et al., Electronic structure of H/GaN(0001): An EELS study of Ga-H formation, PHYS REV B, 60(7), 1999, pp. 4816-4820
Efficient electron-stimulated desorption of hydrogen from GaN(0001)
Authors: Bellitto, VJ Thoms, BD Koleske, DD Wickenden, AE Henry, RL
Citation: Vj. Bellitto et al., Efficient electron-stimulated desorption of hydrogen from GaN(0001), PHYS REV B, 60(7), 1999, pp. 4821-4825
Desorption of hydrogen from GaN(0001) observed by HREELS and ELS
Authors: Bellitto, VJ Yang, Y Thoms, BD Koleske, DD Wickenden, AE Henry, RL
Citation: Vj. Bellitto et al., Desorption of hydrogen from GaN(0001) observed by HREELS and ELS, SURF SCI, 442(2), 1999, pp. L1019-L1023
HREELS of H/GaN(0001): evidence for Ga termination
Authors: Bellitto, VJ Thoms, BD Koleske, DD Wickenden, AE Henry, RL
Citation: Vj. Bellitto et al., HREELS of H/GaN(0001): evidence for Ga termination, SURF SCI, 430(1-3), 1999, pp. 80-88
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