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Results: 1-12 |
Results: 12
The formation of nitridation damage during the growth of GaN on GaAs(001)
Authors: Zsebok, O Thordson, JV Andersson, TG
Citation: O. Zsebok et al., The formation of nitridation damage during the growth of GaN on GaAs(001), JPN J A P 1, 40(2A), 2001, pp. 472-475
Morphology of InGaAs/GaAs quantum wires prepared by highly controlled deep-etching techniques
Authors: Zsebok, O Thordson, JV Nilsson, B Andersson, TG
Citation: O. Zsebok et al., Morphology of InGaAs/GaAs quantum wires prepared by highly controlled deep-etching techniques, NANOTECHNOL, 12(1), 2001, pp. 32-37
The effect of the first GaN monolayer on the nitridation damage of molecular beam epitaxy grown GaN on GaAs(001)
Authors: Zsebok, O Thordson, JV Gunnarsson, JR Zhao, QX Ilver, L Andersson, TG
Citation: O. Zsebok et al., The effect of the first GaN monolayer on the nitridation damage of molecular beam epitaxy grown GaN on GaAs(001), J APPL PHYS, 89(7), 2001, pp. 3662-3667
Effects of small amounts of Al in GaN grown on sapphire (0001) by molecular beam epitaxy
Authors: Zsebok, O Thordson, JV Zhao, QX Andersson, TG
Citation: O. Zsebok et al., Effects of small amounts of Al in GaN grown on sapphire (0001) by molecular beam epitaxy, J APPL PHYS, 89(3), 2001, pp. 1954-1958
The effect of Al in plasma-assisted MBE-grown GaN
Authors: Zsebok, O Thordson, JV Zhao, QX Sodervall, U Ilver, L Andersson, TG
Citation: O. Zsebok et al., The effect of Al in plasma-assisted MBE-grown GaN, MRS I J N S, 5, 2000, pp. NIL_185-NIL_190
Characterisation of surface morphological defects in MBE-grown GaN0.1As0.9layers on GaAs
Authors: Zsebok, O Thordson, JV Ilver, L Sodervall, U Andersson, TG
Citation: O. Zsebok et al., Characterisation of surface morphological defects in MBE-grown GaN0.1As0.9layers on GaAs, APPL SURF S, 166(1-4), 2000, pp. 259-262
Nanocrystals at MBE-grown GaN/GaAs(001) interfaces
Authors: Zsebok, O Thordson, JV Ilver, L Andersson, TG
Citation: O. Zsebok et al., Nanocrystals at MBE-grown GaN/GaAs(001) interfaces, APPL SURF S, 166(1-4), 2000, pp. 317-321
Influence of N/Ga-flux ratio on optical properties and surface morphology of GaN grown on sapphire(0001) by MBE
Authors: Zsebok, O Thordson, JV Zhao, QX Andersson, TG
Citation: O. Zsebok et al., Influence of N/Ga-flux ratio on optical properties and surface morphology of GaN grown on sapphire(0001) by MBE, APPL SURF S, 166(1-4), 2000, pp. 423-427
Surface morphology and compositional variations in molecular beam epitaxy grown GaNxAs1-x alloys
Authors: Zsebok, O Thordson, JV Ilver, L Andersson, TG
Citation: O. Zsebok et al., Surface morphology and compositional variations in molecular beam epitaxy grown GaNxAs1-x alloys, NANOSTR MAT, 12(1-4), 1999, pp. 425-428
Self-diffusion on the arsenic sublattice in GaAs investigated by the broadening of buried nitrogen doping layers
Authors: Stolwijk, NA Bosker, G Thordson, JV Sodervall, U Andersson, TG Jager, C Jager, W
Citation: Na. Stolwijk et al., Self-diffusion on the arsenic sublattice in GaAs investigated by the broadening of buried nitrogen doping layers, PHYSICA B, 274, 1999, pp. 685-688
Surface reconstruction and surface morphology of GaN grown by MBE on GaAs (001)
Authors: Thordson, JV Zsebok, O Andersson, TG
Citation: Jv. Thordson et al., Surface reconstruction and surface morphology of GaN grown by MBE on GaAs (001), PHYS SCR, T79, 1999, pp. 198-201
Detection of DX-like trapping centres in delta-doped pseudomorphic InxGa1-xAs quantum wells
Authors: Thordson, JV Harris, JJ Fahy, MR
Citation: Jv. Thordson et al., Detection of DX-like trapping centres in delta-doped pseudomorphic InxGa1-xAs quantum wells, SOL ST ELEC, 43(1), 1999, pp. 141-145
Risultati: 1-12 |