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Results: 1-7 |
Results: 7
Voltage-tunable two-colour quantum well infrared detector with Al-graded triangular confinement barriers
Authors: Guzman, A Sanchez-Rojas, JL Tijero, JMG Hernando, J Calleja, E Munoz, E Vergara, G Almazan, R Sanchez, FJ Verdu, M Montojo, MT
Citation: A. Guzman et al., Voltage-tunable two-colour quantum well infrared detector with Al-graded triangular confinement barriers, SEMIC SCI T, 16(5), 2001, pp. 285-288
Effect of indium content on the normal-incident photoresponse of InGaAs/GaAs quantum-well infrared photodetectors
Authors: Hernando, J Sanchez-Rojas, JL Guzman, A Munoz, E Tijero, JMG Gonzalez, D Aragon, G Garcia, R
Citation: J. Hernando et al., Effect of indium content on the normal-incident photoresponse of InGaAs/GaAs quantum-well infrared photodetectors, APPL PHYS L, 78(16), 2001, pp. 2390-2392
Optical characterisation of quantum well infra-red detector structures
Authors: Guzman, A Sanchez-Rojas, JL Tijero, JMG Sanchez, JJ Hernando, J Calleja, E Munoz, E Vergara, G Montojo, MT Gomez, LJ Rodriiguez, P Almazan, R Verdu, M
Citation: A. Guzman et al., Optical characterisation of quantum well infra-red detector structures, IEE P-OPTO, 146(2), 1999, pp. 89-92
Growth and characterization of a bound-to-quasi-continuum QWIP with Al-graded triangular confinement barriers
Authors: Guzman, A Sanchez-Rojas, JL Tijero, JMG Hernando, J Calleja, E Munoz, E Vergara, G Almazan, R Gomez, LJ Verdu, M Montojo, MT
Citation: A. Guzman et al., Growth and characterization of a bound-to-quasi-continuum QWIP with Al-graded triangular confinement barriers, IEEE PHOTON, 11(12), 1999, pp. 1650-1652
Optical investigation of the relaxation process in InGaAs/GaAs single strained quantum wells grown on (001) and (111)B GaAs substrates
Authors: Sanchez, JJ Tijero, JMG Hernando, J Sanchez-Rojas, JL Izpura, I
Citation: Jj. Sanchez et al., Optical investigation of the relaxation process in InGaAs/GaAs single strained quantum wells grown on (001) and (111)B GaAs substrates, MICROELEC J, 30(4-5), 1999, pp. 363-366
Influence of substrate misorientation on the optical and structural properties of InGaAs/GaAs single strained quantum wells grown on (111)B GaAs by molecular beam epitaxy
Authors: Sanchez, JJ Gutierrez, M Gonzalez, D Aragon, G Tijero, JMG Sanchez-Rojas, JL Izpura, I Garcia, R
Citation: Jj. Sanchez et al., Influence of substrate misorientation on the optical and structural properties of InGaAs/GaAs single strained quantum wells grown on (111)B GaAs by molecular beam epitaxy, MICROELEC J, 30(4-5), 1999, pp. 373-378
Relaxation study of InxGa1-xAs/GaAs quantum-well structures grown by MBE on (001) and (111)B GaAs for long wavelength applications
Authors: Sanchez, JJ Tijero, JMG Izpura, I Sanchez-Rojas, JL Hopkinson, M Gutierrez, M Gonzalez, D Aragon, G Garcia, R
Citation: Jj. Sanchez et al., Relaxation study of InxGa1-xAs/GaAs quantum-well structures grown by MBE on (001) and (111)B GaAs for long wavelength applications, J CRYST GR, 206(4), 1999, pp. 287-293
Risultati: 1-7 |