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Citation: Va. Gergel' et al., Structural features of the avalanche multiplication in field-effect heterotransistors, DOKL PHYS, 46(2), 2001, pp. 85-87

Authors: Gergel', VA Mokerov, VG Timofeev, MV

Citation: Va. Gergel' et al., Quantum-mechanical features of the field effect in heterotransistors with modulation- and delta-doped regions, SEMICONDUCT, 34(2), 2000, pp. 228-232

Authors: Gergel', VA Mokerov, VG Timofeev, MV Fedorov, YV

Citation: Va. Gergel' et al., Ultraquasi-hydrodynamic electron transport in submicrometer field effect MIS transistors and heterotransistors, SEMICONDUCT, 34(2), 2000, pp. 233-236

Authors: Gergel, VA Timofeev, MV Zelenyi, AP

Citation: Va. Gergel et al., Shallow surface states is a reason for the reduction of surface mobility in metal-dielectric-semiconductor structures and heterotransistors, J COMMUN T, 44(11), 1999, pp. 1252-1255