Citation: Ay. Timoshkin et al., DFT modeling of chemical vapor deposition of GaN from organogallium precursors. 1. Thermodynamics of elimination reactions, J PHYS CH A, 105(13), 2001, pp. 3240-3248
Citation: Ay. Timoshkin et al., DFT modeling of chemical vapor deposition of GaN from organogallium precursors. 2. Structures of the oligomers and thermodynamics of the association processes, J PHYS CH A, 105(13), 2001, pp. 3249-3258
Citation: Ay. Timoshkin et al., A theoretical approach to the single-source precursor concept: quantum chemical modeling of gas-phase reactions, J CRYST GR, 222(1-2), 2001, pp. 170-182
Citation: Ay. Timoshkin et al., The influence of the-basis set superposition error and reorganization energy on the donor-acceptor bonding energy in molecular complexes, ZH NEORG KH, 45(3), 2000, pp. 509-512
Citation: Ay. Timoshkin et Hf. Schaefer, Ab initio and DFT investigations of Al, Ga, and In tricyanides and triisocyanides, J STRUCT CH, 41(1), 2000, pp. 35-40
Citation: Ay. Timoshkin et al., Ab initio and B3LYP quantum-chemical study of donor-acceptor complexes of gallium halides with pyridine, RUSS J G CH, 69(8), 1999, pp. 1204-1211
Citation: Ay. Timoshkin et al., Quantum-chemical ab initio study of phosphorus trihalides and their donor-acceptor MX3PX3 (M = Al, Ga, In : X = F, Cl, Br, I), ZH OBS KH, 69(4), 1999, pp. 565-571
Authors:
Timoshkin, AY
Suvorov, AV
Bettinger, HF
Schaefer, HF
Citation: Ay. Timoshkin et al., Role of the terminal atoms in the donor-acceptor complexes MX3-D (M = Al, Ga, In; X = F, Cl, Br, I; D = YH3, YX3, X-; Y = N, P, As), J AM CHEM S, 121(24), 1999, pp. 5687-5699