Authors:
Besser, PR
Zschech, E
Blum, W
Winter, D
Ortega, R
Rose, S
Herrick, M
Gall, M
Thrasher, S
Tiner, M
Baker, B
Braeckelmann, G
Zhao, L
Simpson, C
Capasso, C
Kawasaki, H
Weitzman, E
Citation: Pr. Besser et al., Microstructural characterization of inlaid copper interconnect lines, J ELEC MAT, 30(4), 2001, pp. 320-330
Authors:
Ma, TZ
Campbell, SA
Smith, R
Hoilien, N
He, BY
Gladfelter, WL
Hobbs, C
Buchanan, D
Taylor, C
Gribelyuk, M
Tiner, M
Coppel, M
Lee, JJ
Citation: Tz. Ma et al., Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates, IEEE DEVICE, 48(10), 2001, pp. 2348-2356
Authors:
Smith, RC
Taylor, CJ
Roberts, J
Campbell, SA
Tiner, M
Hegde, R
Hobbs, C
Gladfelter, WL
Citation: Rc. Smith et al., Observation of precursor control over film stoichiometry during the chemical vapor deposition of amorphous TixSi1-xO2 films, CHEM MATER, 12(10), 2000, pp. 2822
Authors:
Gilmer, D
Hobbs, C
Hegde, R
La, L
Adetutu, O
Conner, J
Tiner, M
Prabhu, L
Bagchi, S
Tobin, P
Citation: D. Gilmer et al., Investigation of titanium nitride gates for tantalum pentoxide and titanium dioxide dielectrics, J VAC SCI A, 18(4), 2000, pp. 1158-1162