Authors:
Hoke, WE
Lemonias, PJ
Kennedy, TD
Torabi, A
Tong, EK
Chang, KL
Hsieh, KC
Citation: We. Hoke et al., Molecular beam epitaxial growth and characterization of strain-compensatedAl0.3In0.7P/InP/Al0.3In0.7P metamorphic-pseudomorphic high electron mobility transistors on GaAs substrates, J VAC SCI B, 19(4), 2001, pp. 1519-1523
Authors:
Hoke, WE
Lyman, PS
Whelan, CS
Mosca, JJ
Torabi, A
Chang, KL
Hsieh, KC
Citation: We. Hoke et al., Growth and characterization of metamorphic In-x(AlGa)(1-x)As/InxGa1-xAs high electron mobility transistor material and devices with X=0.3-0.4, J VAC SCI B, 18(3), 2000, pp. 1638-1641
Citation: Sk. Brierley et al., Precise determination of indium composition and channel thickness in pseudomorphic high electron mobility transistors using room temperature photoluminescence, J APPL PHYS, 86(2), 1999, pp. 914-917
Citation: We. Hoke et al., Reduction of oxygen contamination in InGaP and AlGaInP films grown by solid source molecular beam epitaxy, J VAC SCI B, 16(6), 1998, pp. 3041-3047