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Results: 3

Authors: Huet, F di Forte-Poisson, MA Romann, A Tordjman, M di Persio, J Pecz, B
Citation: F. Huet et al., Modelling of the defect structure in GaN MOCVD thin films by X-ray diffraction, MAT SCI E B, 59(1-3), 1999, pp. 198-201

Authors: Huet, F di Forte-Poisson, MA Romann, A Tordjman, M di Persio, J
Citation: F. Huet et al., Characterization of InGaN/GaN multiple quantum well structures. Application to LEDs, PHYS ST S-A, 176(1), 1999, pp. 103-107

Authors: di Forte-Poisson, MA Huet, F Romann, A Tordjman, M Lancefield, D Pereira, E Di Persio, J Pecz, B
Citation: Ma. Di Forte-poisson et al., Relationship between physical properties and gas purification in GaN grownby metalorganic vapor phase epitaxy, J CRYST GR, 195(1-4), 1998, pp. 314-318
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