AAAAAA

   
Results: 1-18 |
Results: 18
High-power highly reliable Al-free 940-nm diode lasers
Authors: Erbert, G Beister, G Hulsewede, R Knauer, A Pittroff, W Sebastian, J Wenzel, H Weyers, M Trankle, G
Citation: G. Erbert et al., High-power highly reliable Al-free 940-nm diode lasers, IEEE S T QU, 7(2), 2001, pp. 143-148
High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence
Authors: Sebastian, J Beister, G Bugge, F Buhrandt, F Erbert, G Hansel, HG Hulsewede, R Knauer, A Pittroff, W Staske, R Schroder, M Wenzel, H Weyers, M Trankle, G
Citation: J. Sebastian et al., High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence, IEEE S T QU, 7(2), 2001, pp. 334-339
Tensile-strained GaAsP-AlGaAs laser diodes for reliable 1,2-W continuous-wave operation at 735 nm
Authors: Sumpf, B Beister, G Erbert, G Fricke, J Knauer, A Pittroff, W Ressel, P Sebastian, J Wenzel, H Trankle, G
Citation: B. Sumpf et al., Tensile-strained GaAsP-AlGaAs laser diodes for reliable 1,2-W continuous-wave operation at 735 nm, IEEE PHOTON, 13(1), 2001, pp. 7-9
Investigation of strain-modulated InGaAs nanostructures by grazing-incidence x-ray diffraction and photoluminescence
Authors: Zeimer, U Grenzer, J Pietsch, U Gramlich, S Bugge, F Smirnitzki, V Weyers, M Trankle, G
Citation: U. Zeimer et al., Investigation of strain-modulated InGaAs nanostructures by grazing-incidence x-ray diffraction and photoluminescence, J PHYS D, 34(10A), 2001, pp. A183-A187
Defect recognition via longitudinal mode analysis of high power fundamental mode and broad area edge emitting laser diodes
Authors: Klehr, A Beister, G Erbert, G Klein, A Maege, J Rechenberg, I Sebastian, J Wenzel, H Trankle, G
Citation: A. Klehr et al., Defect recognition via longitudinal mode analysis of high power fundamental mode and broad area edge emitting laser diodes, J APPL PHYS, 90(1), 2001, pp. 43-47
2W reliable operation of lambda=735nm GaAsP/AlGaAs laser diodes
Authors: Sumpf, B Beister, G Erbert, G Fricke, J Knauer, A Pittroff, W Ressel, P Sebastian, J Wenzel, H Trankle, G
Citation: B. Sumpf et al., 2W reliable operation of lambda=735nm GaAsP/AlGaAs laser diodes, ELECTR LETT, 37(6), 2001, pp. 351-353
High efficiency AlGaInP-based 650 nm vertical-cavity surface-emitting lasers
Authors: Knigge, A Zorn, M Wenzel, H Weyers, M Trankle, G
Citation: A. Knigge et al., High efficiency AlGaInP-based 650 nm vertical-cavity surface-emitting lasers, ELECTR LETT, 37(20), 2001, pp. 1222-1223
High-power diode lasers with small vertical beam divergence emitting at 808 nm
Authors: Wenzel, H Bugge, F Erbert, G Hulsewede, R Staske, R Trankle, G
Citation: H. Wenzel et al., High-power diode lasers with small vertical beam divergence emitting at 808 nm, ELECTR LETT, 37(16), 2001, pp. 1024-1026
Evidence for strain-induced lateral carrier confinement in InGaAs quantum wells by low-temperature near-field spectroscopy
Authors: Zeimer, U Bugge, F Gramlich, S Smirnitski, V Weyers, M Trankle, G Grenzer, J Pietsch, U Cassabois, G Emiliani, V Lienau, C
Citation: U. Zeimer et al., Evidence for strain-induced lateral carrier confinement in InGaAs quantum wells by low-temperature near-field spectroscopy, APPL PHYS L, 79(11), 2001, pp. 1611-1613
Influence of current spreading on the transparency current density of quantum-well lasers
Authors: Wenzel, H Erbert, G Knauer, A Oster, A Vogel, K Trankle, G
Citation: H. Wenzel et al., Influence of current spreading on the transparency current density of quantum-well lasers, SEMIC SCI T, 15(6), 2000, pp. 557-560
Reliability of AIGaN/GaN HFETs comprising refractory ohmic and Schottky contacts
Authors: Wurfl, J Hilsenbeck, J Nebauer, E Trankle, G Obloh, H Osterle, W
Citation: J. Wurfl et al., Reliability of AIGaN/GaN HFETs comprising refractory ohmic and Schottky contacts, MICROEL REL, 40(8-10), 2000, pp. 1689-1693
Optimization of MOVPE growth for 650 nm-emitting VCSELs
Authors: Bhattacharya, A Zorn, M Oster, A Nasarek, M Wenzel, H Sebastian, J Weyers, M Trankle, G
Citation: A. Bhattacharya et al., Optimization of MOVPE growth for 650 nm-emitting VCSELs, J CRYST GR, 221, 2000, pp. 663-667
High performance InGaP/GaAs HBTs for mobile communications
Authors: Achouche, M Spitzbart, T Kurpas, P Brunner, F Wurfl, J Trankle, G
Citation: M. Achouche et al., High performance InGaP/GaAs HBTs for mobile communications, ELECTR LETT, 36(12), 2000, pp. 1073-1075
Aging behaviour of AlGaN/GaN HFETs with advanced ohmic and Schottky contacts
Authors: Hilsenbeck, J Nebauer, E Wurfl, J Trankle, G Obloh, H
Citation: J. Hilsenbeck et al., Aging behaviour of AlGaN/GaN HFETs with advanced ohmic and Schottky contacts, ELECTR LETT, 36(11), 2000, pp. 980-981
Effect of band gap renormalization on threshold current and efficiency of a distributed Bragg reflector laser
Authors: Wenzel, H Klehr, A Erbert, G Sebastian, J Trankle, G Pereira, MF
Citation: H. Wenzel et al., Effect of band gap renormalization on threshold current and efficiency of a distributed Bragg reflector laser, APPL PHYS L, 76(19), 2000, pp. 2653-2655
High-power tensile-strained GaAsP-AlGaAs quantum-well lasers emitting between 715 and 790 nm
Authors: Erbert, G Bugge, F Knauer, A Sebastian, J Thies, A Wenzel, H Weyers, M Trankle, G
Citation: G. Erbert et al., High-power tensile-strained GaAsP-AlGaAs quantum-well lasers emitting between 715 and 790 nm, IEEE S T QU, 5(3), 1999, pp. 780-784
AlGaN/GaN HFETs with new ohmic and Schottky contacts for thermal stabilityup to 400 degrees C
Authors: Hilsenbeck, J Rieger, W Nebauer, E John, W Trankle, G Wurfl, J Ramakrishan, A Obloh, H
Citation: J. Hilsenbeck et al., AlGaN/GaN HFETs with new ohmic and Schottky contacts for thermal stabilityup to 400 degrees C, PHYS ST S-A, 176(1), 1999, pp. 183-187
Reliability considerations of III-nitride microelectronic devices
Authors: Wurfl, J Abrosimova, V Hilsenbeck, J Nebauer, E Rieger, W Trankle, G
Citation: J. Wurfl et al., Reliability considerations of III-nitride microelectronic devices, MICROEL REL, 39(12), 1999, pp. 1737-1757
Risultati: 1-18 |