Authors:
Nikishin, S
Kipshidze, G
Kuryatkov, V
Choi, K
Gherasoiu, I
de Peralta, LG
Zubrilov, A
Tretyakov, V
Copeland, K
Prokofyeva, T
Holtz, M
Asomoza, R
Kudryavtsev, Y
Temkin, H
Citation: S. Nikishin et al., Gas source molecular beam epitaxy of high quality AlxGa1-xN (0 <= x <= 1) on Si(111), J VAC SCI B, 19(4), 2001, pp. 1409-1412