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Results: 1-10 |
Results: 10
High-temperature superconductivity in chalcogenide vitreous semiconductors
Authors: Prikhod'ko, AV Tsendin, KD Popov, BP
Citation: Av. Prikhod'Ko et al., High-temperature superconductivity in chalcogenide vitreous semiconductors, SEMICONDUCT, 35(6), 2001, pp. 677-679
Mechanism of electroluminescence in the amorphous silicon-based erbium-doped structures
Authors: Yassievich, IN Bresler, MS Gusev, OB Pak, PE Tsendin, KD Terukov, EI
Citation: In. Yassievich et al., Mechanism of electroluminescence in the amorphous silicon-based erbium-doped structures, MAT SCI E B, 81(1-3), 2001, pp. 182-184
Characteristics of information recording on chalcogenide glassy semiconductors
Authors: Tsendin, KD Lebedev, EA Kim, YH Yoo, IJ Kim, EG
Citation: Kd. Tsendin et al., Characteristics of information recording on chalcogenide glassy semiconductors, SEMIC SCI T, 16(5), 2001, pp. 394-396
Crystal-glass phase transition induced by pulses of electric field in chalcogenide semiconductors
Authors: Lebedev, EA Tsendin, KD Kazakova, LP
Citation: Ea. Lebedev et al., Crystal-glass phase transition induced by pulses of electric field in chalcogenide semiconductors, SEMICONDUCT, 34(1), 2000, pp. 95-97
Erbium electroluminescence excitation in amorphous hydrogenated silicon under thermally stimulated deep-center tunneling ionization
Authors: Gusev, OB Bresler, MS Zakharchenya, BP Kuznetsov, AN Pak, PE Terukov, EI Tsendin, KD Yassievich, IN
Citation: Ob. Gusev et al., Erbium electroluminescence excitation in amorphous hydrogenated silicon under thermally stimulated deep-center tunneling ionization, PHYS SOL ST, 41(2), 1999, pp. 185-191
Controlling the U--center density in Se-As chalcogenide-glass semiconductors by doping with metals and halogens
Authors: Kazakova, LP Tsendin, KD
Citation: Lp. Kazakova et Kd. Tsendin, Controlling the U--center density in Se-As chalcogenide-glass semiconductors by doping with metals and halogens, SEMICONDUCT, 33(7), 1999, pp. 795-798
Mechanism of erbium electroluminescence in hydrogenated amorphous silicon
Authors: Bresler, MS Gusev, OB Pak, PE Terukov, EI Tsendin, KD Yassievich, IN
Citation: Ms. Bresler et al., Mechanism of erbium electroluminescence in hydrogenated amorphous silicon, SEMICONDUCT, 33(6), 1999, pp. 622-623
Negative-U centres model of high-T-c superconductivity in metal oxides
Authors: Tsendin, KD Popov, BP
Citation: Kd. Tsendin et Bp. Popov, Negative-U centres model of high-T-c superconductivity in metal oxides, SUPERCOND S, 12(5), 1999, pp. 255-258
Mechanism of excitation of erbium electroluminescence in amorphous silicon
Authors: Bresler, MS Fuhs, W Gregorkiewicz, T Gusev, OB Pak, PE Terukov, EI Tsendin, KD Yassievich, IN
Citation: Ms. Bresler et al., Mechanism of excitation of erbium electroluminescence in amorphous silicon, PHYSICA B, 274, 1999, pp. 354-357
Room-temperature electroluminescence from erbium-doped amorphous hydrogenated silicon
Authors: Gusev, OB Bresler, MS Terukov, EI Tsendin, KD Yassievich, IN
Citation: Ob. Gusev et al., Room-temperature electroluminescence from erbium-doped amorphous hydrogenated silicon, J LUMINESC, 80(1-4), 1998, pp. 335-338
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