Authors: Chen, DM Yang, CS Chuang, FB Tzeng, YW Wei, CC Ro, CS Lan, KY Chou, WC Lan, WH Uen, WY

Citation: Dm. Chen et al., The effect of substrate misorientation angle on the band gap energies of II-VI compound semiconductors grown by molecular beam epitaxy, CHIN J PHYS, 38(1), 2000, pp. 74-80