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Results: 1-10 |
Results: 10
3D RESURF DOUBLE-GATE MOSFET - A REVOLUTIONARY POWER DEVICE CONCEPT
Authors: UDREA F POPESCU A MILNE WI
Citation: F. Udrea et al., 3D RESURF DOUBLE-GATE MOSFET - A REVOLUTIONARY POWER DEVICE CONCEPT, Electronics Letters, 34(8), 1998, pp. 808-809
AN ON-STATE ANALYTICAL MODEL FOR THE TRENCH INSULATED GATE BIPOLAR-TRANSISTOR (TIGBT)
Authors: UDREA F AMARATUNGA GAJ
Citation: F. Udrea et Gaj. Amaratunga, AN ON-STATE ANALYTICAL MODEL FOR THE TRENCH INSULATED GATE BIPOLAR-TRANSISTOR (TIGBT), Solid-state electronics, 41(8), 1997, pp. 1111-1118
THE TRENCH INSULATED GATE BIPOLAR-TRANSISTOR - A HIGH-POWER SWITCHINGDEVICE
Authors: UDREA F AMARATUNGA G
Citation: F. Udrea et G. Amaratunga, THE TRENCH INSULATED GATE BIPOLAR-TRANSISTOR - A HIGH-POWER SWITCHINGDEVICE, Microelectronics, 28(1), 1997, pp. 1-12
LATERAL INSULATED GATE BIPOLAR-TRANSISTOR (LIGBT) STRUCTURE-BASED ON PARTIAL ISOLATION SOI TECHNOLOGY
Authors: UDREA F MILNE W POPESCU A
Citation: F. Udrea et al., LATERAL INSULATED GATE BIPOLAR-TRANSISTOR (LIGBT) STRUCTURE-BASED ON PARTIAL ISOLATION SOI TECHNOLOGY, Electronics Letters, 33(10), 1997, pp. 907-909
THE MOS INVERSION LAYER AS MINORITY-CARRIER INJECTOR
Authors: UDREA F AMARATUNGA GAJ HUMPHREY J CLARK J EVANS AGR
Citation: F. Udrea et al., THE MOS INVERSION LAYER AS MINORITY-CARRIER INJECTOR, IEEE electron device letters, 17(9), 1996, pp. 425-427
DESIGN OF A SILICON MICROSENSOR ARRAY DEVICE FOR GAS-ANALYSIS
Authors: UDREA F GARDNER JW
Citation: F. Udrea et Jw. Gardner, DESIGN OF A SILICON MICROSENSOR ARRAY DEVICE FOR GAS-ANALYSIS, Microelectronics, 27(6), 1996, pp. 449-457
THEORETICAL AND NUMERICAL COMPARISON BETWEEN DMOS AND TRENCH TECHNOLOGIES FOR INSULATED GATE BIPOLAR-TRANSISTORS
Authors: UDREA F AMARATUNGA CAJ
Citation: F. Udrea et Caj. Amaratunga, THEORETICAL AND NUMERICAL COMPARISON BETWEEN DMOS AND TRENCH TECHNOLOGIES FOR INSULATED GATE BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 42(7), 1995, pp. 1356-1366
THE EFFECT OF THE HOLE CURRENT ON THE CHANNEL INVERSION IN TRENCH INSULATED GATE BIPOLAR-TRANSISTORS (TIGBT) (VOL 37, PG 507, 1994)
Authors: UDREA F AMARATUNGA GAJ HUANG Q
Citation: F. Udrea et al., THE EFFECT OF THE HOLE CURRENT ON THE CHANNEL INVERSION IN TRENCH INSULATED GATE BIPOLAR-TRANSISTORS (TIGBT) (VOL 37, PG 507, 1994), Solid-state electronics, 37(9), 1994, pp. 180000001-180000001
THE EFFECT OF THE HOLE CURRENT ON THE CHANNEL INVERSION IN TRENCH INSULATED GATE BIPOLAR-TRANSISTORS (TIGBT)
Authors: UDREA F AMARATUNGA GAJ HUANG Q
Citation: F. Udrea et al., THE EFFECT OF THE HOLE CURRENT ON THE CHANNEL INVERSION IN TRENCH INSULATED GATE BIPOLAR-TRANSISTORS (TIGBT), Solid-state electronics, 37(3), 1994, pp. 507-514
ANALYSIS OF A MOS-CONTROLLABLE THYRISTOR UTILIZING AN INVERSION LAYEREMITTER
Authors: UDREA F AMARATUNGA GAJ
Citation: F. Udrea et Gaj. Amaratunga, ANALYSIS OF A MOS-CONTROLLABLE THYRISTOR UTILIZING AN INVERSION LAYEREMITTER, Solid-state electronics, 37(12), 1994, pp. 1999-2002
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