Authors: UPPAL PN CHARACHE G BALDASARO P CAMPBELL B LOUGHIN S SVENSSON S GILL D

Citation: Pn. Uppal et al., MBE GROWTH OF GAINASSB P N JUNCTION DIODES FOR THERMOPHOTOVOLTAIC APPLICATIONS/, Journal of crystal growth, 175, 1997, pp. 877-882

Authors: SVENSSON SP GILL DM UPPAL PN

Citation: Sp. Svensson et al., OPTICAL CHARACTERIZATION OF AL0.5GA0.5AS1-XSBX BUFFER LAYERS WITH DOPED ALINAS INGAAS STRUCTURES/, Journal of applied physics, 81(3), 1997, pp. 1422-1426

Authors: SVENSSON SP UPPAL PN GILL DM

Citation: Sp. Svensson et al., CELL CONFIGURATION-INDUCED STRAIN IN QUATERNARY FILMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2192-2194

Authors: GILL DM KANE BC SVENSSON SP TU DW UPPAL PN BYER NE

Citation: Dm. Gill et al., HIGH-PERFORMANCE, 0.1 MU-M INALAS INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS ON GAAS/, IEEE electron device letters, 17(7), 1996, pp. 328-330

Authors: SVENSSON SP GILL DM TOWNER FJ UPPAL PN

Citation: Sp. Svensson et al., ROOM-TEMPERATURE PHOTOLUMINESCENCE FROM MODULATION-DOPED ALGAAS INGAAS/GAAS QUANTUM-WELLS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 134-141