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Authors: USAMI A ISHIMURA M WADA T ISHIGAMI S
Citation: A. Usami et al., STRUCTURAL CHARACTERIZATION OF A BONDED SILICON-ON-INSULATOR LAYER WITH VOIDS BY MICRO-RAMAN SPECTROSCOPY, Journal of applied physics, 75(12), 1994, pp. 7866-7868

Authors: ICHIMURA M KATO K UEKITA H KITAMURA N USAMI A WADA T
Citation: M. Ichimura et al., OPTICAL CHARACTERIZATION OF GASB-BASED TERNARY AND QUATERNARY ALLOYS GROWN BY LIQUID-PHASE EPITAXY AT LOW-TEMPERATURES, JPN J A P 1, 32(9A), 1993, pp. 3707-3712

Authors: ICHIMURA M USAMI A WADA T
Citation: M. Ichimura et al., THERMODYNAMIC MODEL FOR THE ANNEALING PROCESS OF SI-IMPLANTED GAAS, Modelling and simulation in materials science and engineering, 1(4), 1993, pp. 529-538

Authors: ICHIMURA M MORIGUCHI Y USAMI A WADA T WAKAHARA A SASAKI A
Citation: M. Ichimura et al., MICRO-RAMAN CHARACTERIZATION OF MOLECULAR-BEAM EPITAXIAL GE HETEROLAYERS ON SI SUBSTRATES, Journal of electronic materials, 22(7), 1993, pp. 779-784

Authors: ICHIMURA M USAMI A WADA T FUJITA S FUJITA S
Citation: M. Ichimura et al., OBSERVATION OF PHONON-PLASMON COUPLED MODES AT THE INTERFACE BETWEEN ZNSE AND SEMIINSULATING GAAS BY MICRO-RAMAN SPECTROSCOPY - REPLY, Applied physics letters, 63(23), 1993, pp. 3237-3237
Risultati: 1-25 | 26-30 |