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Authors:
ICHIMURA M
KATO K
UEKITA H
KITAMURA N
USAMI A
WADA T
Citation: M. Ichimura et al., OPTICAL CHARACTERIZATION OF GASB-BASED TERNARY AND QUATERNARY ALLOYS GROWN BY LIQUID-PHASE EPITAXY AT LOW-TEMPERATURES, JPN J A P 1, 32(9A), 1993, pp. 3707-3712
Citation: M. Ichimura et al., THERMODYNAMIC MODEL FOR THE ANNEALING PROCESS OF SI-IMPLANTED GAAS, Modelling and simulation in materials science and engineering, 1(4), 1993, pp. 529-538
Authors:
ICHIMURA M
MORIGUCHI Y
USAMI A
WADA T
WAKAHARA A
SASAKI A
Citation: M. Ichimura et al., MICRO-RAMAN CHARACTERIZATION OF MOLECULAR-BEAM EPITAXIAL GE HETEROLAYERS ON SI SUBSTRATES, Journal of electronic materials, 22(7), 1993, pp. 779-784
Authors:
ICHIMURA M
USAMI A
WADA T
FUJITA S
FUJITA S
Citation: M. Ichimura et al., OBSERVATION OF PHONON-PLASMON COUPLED MODES AT THE INTERFACE BETWEEN ZNSE AND SEMIINSULATING GAAS BY MICRO-RAMAN SPECTROSCOPY - REPLY, Applied physics letters, 63(23), 1993, pp. 3237-3237