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Results: 1-8 |
Results: 8
REAL-TIME ELECTRONIC MONITORING OF ADSORPTION-KINETICS - EVIDENCE FOR2-SITE ADSORPTION MECHANISM OF DICARBOXYLIC-ACIDS ON GAAS(100)
Authors: VILAN A USSYSHKIN R GARTSMAN K CAHEN D NAAMAN R SHANZER A
Citation: A. Vilan et al., REAL-TIME ELECTRONIC MONITORING OF ADSORPTION-KINETICS - EVIDENCE FOR2-SITE ADSORPTION MECHANISM OF DICARBOXYLIC-ACIDS ON GAAS(100), JOURNAL OF PHYSICAL CHEMISTRY B, 102(18), 1998, pp. 3307-3309
QUANTITATIVE-ANALYSIS OF DELOCALIZATION IN THE VICINITY OF THE METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS
Authors: SHLIMAK I KAVEH M USSYSHKIN R GINODMAN V RESNICK L GANTMAKHER VF
Citation: I. Shlimak et al., QUANTITATIVE-ANALYSIS OF DELOCALIZATION IN THE VICINITY OF THE METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS, Journal of physics. Condensed matter, 9(45), 1997, pp. 9873-9880
UNIFICATION OF THE METAL-INSULATOR TRANSITIONS DRIVEN BY THE IMPURITYCONCENTRATION AND BY THE MAGNETIC-FIELD IN ARSENIC-DOPED GERMANIUM
Authors: SHLIMAK I KAVEH M USSYSHKIN R GINODMAN V RESNICK L
Citation: I. Shlimak et al., UNIFICATION OF THE METAL-INSULATOR TRANSITIONS DRIVEN BY THE IMPURITYCONCENTRATION AND BY THE MAGNETIC-FIELD IN ARSENIC-DOPED GERMANIUM, Physical review. B, Condensed matter, 55(3), 1997, pp. 1303-1305
DETERMINATION OF THE CRITICAL CONDUCTIVITY EXPONENT FOR THE METAL-INSULATOR-TRANSITION AT NONZERO TEMPERATURES - UNIVERSALITY OF THE TRANSITION - REPLY
Authors: SHLIMAK I KAVEH M USSYSHKIN R GINODMAN V RESNICK L
Citation: I. Shlimak et al., DETERMINATION OF THE CRITICAL CONDUCTIVITY EXPONENT FOR THE METAL-INSULATOR-TRANSITION AT NONZERO TEMPERATURES - UNIVERSALITY OF THE TRANSITION - REPLY, Physical review letters, 78(20), 1997, pp. 3978-3978
DETERMINATION OF THE CRITICAL CONDUCTIVITY EXPONENT FOR THE METAL-INSULATOR-TRANSITION AT NONZERO TEMPERATURES - UNIVERSALITY OF THE TRANSITION
Authors: SHLIMAK I KAVEH M USSYSHKIN R GINODMAN V RESNICK L
Citation: I. Shlimak et al., DETERMINATION OF THE CRITICAL CONDUCTIVITY EXPONENT FOR THE METAL-INSULATOR-TRANSITION AT NONZERO TEMPERATURES - UNIVERSALITY OF THE TRANSITION, Physical review letters, 77(6), 1996, pp. 1103-1106
DETERMINATION OF THE IMPURITY CONCENTRATION IN HEAVILY-DOPED INHOMOGENEOUS SEMICONDUCTORS FROM THE MEASUREMENT OF THE LOW-TEMPERATURE CONDUCTIVITY
Authors: SHLIMAK I USSYSHKIN R RESNICK L GINODMAN V
Citation: I. Shlimak et al., DETERMINATION OF THE IMPURITY CONCENTRATION IN HEAVILY-DOPED INHOMOGENEOUS SEMICONDUCTORS FROM THE MEASUREMENT OF THE LOW-TEMPERATURE CONDUCTIVITY, Applied physics A: Materials science & processing, 61(2), 1995, pp. 115-118
1 F HOPPING NOISE IN CRYSTALLINE GERMANIUM
Authors: SHLIMAK I KRAFTMAKHER Y USSYSHKIN R ZILBERBERG K
Citation: I. Shlimak et al., 1 F HOPPING NOISE IN CRYSTALLINE GERMANIUM, Solid state communications, 93(10), 1995, pp. 829-832
TEMPERATURE-INDUCED SMEARING OF THE COULOMB GAP - EXPERIMENT AND COMPUTER-SIMULATION
Authors: SHLIMAK I KAVEH M USSYSHKIN R GINODMAN V BARANOVSKII SD THOMAS P VAUPEL H VANDERHEIJDEN RW
Citation: I. Shlimak et al., TEMPERATURE-INDUCED SMEARING OF THE COULOMB GAP - EXPERIMENT AND COMPUTER-SIMULATION, Physical review letters, 75(26), 1995, pp. 4764-4767
Risultati: 1-8 |