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Results:
1-20
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Results: 20
Authors:
Chen, ZQ
Suzuki, T
Kondo, K
Uedono, A
Ito, Y
Citation: Zq. Chen et al., Free volume in polycarbonate studied by positron annihilation: Effects of free radicals and trapped electrons on positronium formation, JPN J A P 1, 40(8), 2001, pp. 5036-5040
Authors:
Uedono, A
Ogura, A
Tanigawa, S
Citation: A. Uedono et al., Evaluation of SOI substrates by positron annihilation, JPN J A P 1, 40(4B), 2001, pp. 2903-2906
Authors:
Uedono, A
Fukui, S
Muramatsu, M
Ubukata, T
Kimura, S
Tanigawa, S
Citation: A. Uedono et al., Open spaces and molecular motions in carbon-black- and silica-loaded SBR investigated using positron annihilation, J POL SC PP, 39(8), 2001, pp. 835-842
Authors:
Ueno, T
Irisawa, T
Shiraki, Y
Uedono, A
Tanigawa, S
Suzuki, R
Ohdaira, T
Mikado, T
Citation: T. Ueno et al., Characterization of low temperature grown Si layer for SiGe pseudo-substrates by positron annihilation spectroscopy, J CRYST GR, 227, 2001, pp. 761-765
Authors:
Uedono, A
Chen, ZQ
Suzuki, R
Ohdaira, T
Mikado, T
Fukui, S
Shiota, A
Kimura, S
Citation: A. Uedono et al., Nanoporous structure of methyl-silsesquioxane films using monoenergetic positron beams, J APPL PHYS, 90(5), 2001, pp. 2498-2503
Authors:
Uedono, A
Chen, ZQ
Ogura, A
Ono, H
Suzuki, R
Ohdaira, T
Mikado, T
Citation: A. Uedono et al., Oxygen-related defects in low-dose separation-by-implanted oxygen wafers probed by monoenergetic positron beams, J APPL PHYS, 90(12), 2001, pp. 6026-6031
Authors:
Uedono, A
Chichibu, SF
Chen, ZQ
Sumiya, M
Suzuki, R
Ohdaira, T
Mikado, T
Mukai, T
Nakamura, S
Citation: A. Uedono et al., Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams, J APPL PHYS, 90(1), 2001, pp. 181-186
Authors:
Uedono, A
Muramatsu, M
Ubukata, T
Watanabe, M
Ichihashi, T
Suzuki, R
Ohdaira, T
Mikado, T
Takasu, S
Citation: A. Uedono et al., A study of vacancy-type defects introduced by the carburization of Si by monoenergetic positron beams, J APPL PHYS, 89(7), 2001, pp. 3606-3610
Authors:
Chichibu, SF
Setoguchi, A
Uedono, A
Yoshimura, K
Sumiya, M
Citation: Sf. Chichibu et al., Impact of growth polar direction on the optical properties of GaN grown bymetalorganic vapor phase epitaxy, APPL PHYS L, 78(1), 2001, pp. 28-30
Authors:
Uedono, A
Muramatsu, M
Ubukata, T
Tanino, H
Tanigawa, S
Nakano, A
Yamamoto, H
Suzuki, R
Ohdaira, T
Mikado, T
Citation: A. Uedono et al., Oxygen-related defects introduced by As+-implantation through cap layers in Si probed by monoenergetic positron beams, JPN J A P 1, 39(11), 2000, pp. 6126-6129
Authors:
Uedono, A
Watanabe, M
Takasu, S
Sabato, T
Tanigawa, S
Citation: A. Uedono et al., Positron annihilation in silicon in thermal equilibrium at high temperature, J PHYS-COND, 12(5), 2000, pp. 719-728
Authors:
Uedono, A
Suzuki, R
Ohdaira, T
Mikado, T
Tanigawa, S
Ban, M
Kyoto, M
Uozumi, T
Citation: A. Uedono et al., Open spaces and relaxation processes in the subsurface region of polypropylene probed by monoenergetic positron beams, J POL SC PP, 38(1), 2000, pp. 101-107
Authors:
Ueno, T
Irisawa, T
Shiraki, Y
Uedono, A
Tanigawa, S
Citation: T. Ueno et al., Low temperature buffer growth for modulation doped SiGe/Ge/SiGe heterostructures with high hole mobility, THIN SOL FI, 369(1-2), 2000, pp. 320-323
Crystallization of an amorphous layer in P+-implanted 6H-SiC studied by monoenergetic positron beams
Authors:
Uedono, A
Tanigawa, S
Ohshima, T
Itoh, H
Yoshikawa, M
Nashiyama, I
Frank, T
Pensl, G
Suzuki, R
Ohdaira, T
Mikado, T
Citation: A. Uedono et al., Crystallization of an amorphous layer in P+-implanted 6H-SiC studied by monoenergetic positron beams, J APPL PHYS, 87(9), 2000, pp. 4119-4125
Authors:
Uedono, A
Tanigawa, S
Ogura, A
Ono, H
Suzuki, R
Ohdaira, T
Mikado, T
Citation: A. Uedono et al., Annealing properties of defects during Si-on-insulator fabrication by low-dose oxygen implantation studied by monoenergetic positron beams, J APPL PHYS, 87(4), 2000, pp. 1659-1665
Authors:
Uedono, A
Mori, K
Morishita, N
Itoh, H
Tanigawa, S
Fujii, S
Shikata, S
Citation: A. Uedono et al., Annealing behaviours of defects in electron-irradiated diamond probed by positron annihilation, J PHYS-COND, 11(25), 1999, pp. 4925-4934
Authors:
Uedono, A
Fujii, S
Morishita, N
Itoh, H
Tanigawa, S
Shikata, S
Citation: A. Uedono et al., Defects in synthesized and natural diamond probed by positron annihilation, J PHYS-COND, 11(20), 1999, pp. 4109-4122
Authors:
Uedono, A
Aiko, W
Yamamoto, T
Nakamichi, T
Tanigawa, S
Citation: A. Uedono et al., Open spaces and molecular motions of acrylic epoxy-based network polymers probed by positron annihilation, J POL SC PP, 37(20), 1999, pp. 2875-2880
Authors:
Uedono, A
Hiketa, M
Tanigawa, S
Kitano, T
Kubota, T
Makabe, M
Suzuki, R
Ohdaira, T
Mikado, T
Citation: A. Uedono et al., Defects in p(+)-gate metal-oxide-semiconductor structures probed by monoenergetic positron beams, J APPL PHYS, 86(10), 1999, pp. 5385-5391
Authors:
Uedono, A
Tanigawa, S
Ohshima, T
Itoh, H
Aoki, Y
Yoshikawa, M
Nashiyama, I
Citation: A. Uedono et al., Oxygen-related defects in O+-implanted 6H-SiC studied by a monoenergetic positron beam, J APPL PHYS, 86(10), 1999, pp. 5392-5398
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