Authors: Kitatani, T Nakahara, K Kondow, M Uomi, K Tanaka, T

Citation: T. Kitatani et al., A 1.3-mu m GaInNAs/GaAs single-quantum-well laser diode with a high characteristic temperature over 200 K, JPN J A P 2, 39(2A), 2000, pp. L86-L87

Authors: Takahashi, M Ohtoshi, T Aoki, M Sato, H Tsuji, S Uomi, K Naono, K

Citation: M. Takahashi et al., Numerical analysis of beam-expanders integrated with laser diodes, IEICE TR EL, E83C(6), 2000, pp. 845-854

Authors: Kitatani, T Nakahara, K Kondow, M Uomi, K Tanaka, T

Citation: T. Kitatani et al., Mechanism analysis of improved GaInNAs optical properties through thermal annealing, J CRYST GR, 209(2-3), 2000, pp. 345-349

Authors: Kitatani, T Kondow, M Kikawa, T Yazawa, Y Okai, M Uomi, K

Citation: T. Kitatani et al., Analysis of band offset in GaNAs/GaAs by X-ray photoelectron spectroscopy, JPN J A P 1, 38(9A), 1999, pp. 5003-5006

Authors: Kitatani, T Kondow, M Nakahara, K Larson, MC Yazawa, Y Okai, M Uomi, K

Citation: T. Kitatani et al., Nitrogen incorporation rate, optimal growth temperature, and AsH3-flow rate in GaInNAs growth by gas-source MBE using N-radicals as an N-source, J CRYST GR, 202, 1999, pp. 351-354