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Citation: A. Grzechnik et al., Pressure-induced phase transitions in cadmium thiogallate CdGa2Se4, J SOL ST CH, 160(1), 2001, pp. 205-211

Authors: Tiginyanu, IM Ursaki, VV Raptis, YS Stergiou, V Anastassakis, E Hartnagel, HL Vogt, A Prevot, B Schwab, C

Citation: Im. Tiginyanu et al., Raman modes in porous GaP under hydrostatic pressure, PHYS ST S-B, 211(1), 1999, pp. 281-286

Authors: Georgobiani, AN Aminov, UA Dravin, VA Lepnev, LS Mullabaev, ID Ursaki, VV Iljukhina, ZP

Citation: An. Georgobiani et al., Luminescence and electrophysical characteristics of ZnSe implanted with acceptor impurities, NUCL INST A, 426(1), 1999, pp. 164-168

Authors: Ursaki, VV Burlakov, II Tiginyanu, IM Raptis, YS Anastassakis, E Anedda, A

Citation: Vv. Ursaki et al., Phase transitions in defect chalcopyrite compounds under hydrostatic pressure, PHYS REV B, 59(1), 1999, pp. 257-268

Authors: Sarua, A Tiginyanu, IM Ursaki, VV Irmer, G Monecke, J Hartnagel, HL

Citation: A. Sarua et al., Charge carrier distribution in free-standing porous GaP membranes studied by Raman spectroscopy, SOL ST COMM, 112(10), 1999, pp. 581-585