Authors:
RINGEISEN F
STEINMETZ D
VAN S
BOLMONT D
KOULMANN JJ
Citation: F. Ringeisen et al., GROWTH OF A GE SI/GE(100) HETEROSTRUCTURE BY VERY-LOW PRESSURE CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4 GASES - PHOTOEMISSION AND LOW-ENERGY-ELECTRON DIFFRACTION STUDIES/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 14-17
Citation: S. Van et al., EFFECT OF ANNEALING ON A GE THIN-FILM ON A SI(111)7X7 SURFACE - A STUDY USING ARUPS, XPD, AND LEED, Physical review. B, Condensed matter, 50(7), 1994, pp. 4424-4429
Authors:
STEINMETZ D
VAN S
RINGEISEN F
BOLMONT D
KOULMANN JJ
Citation: D. Steinmetz et al., THERMAL AND CATALYTIC DECOMPOSITION OF SI2H6 ON A GE(100)2X1 SURFACE - PHOTOEMISSION AND LEED STUDIES, Surface science, 309, 1994, pp. 253-257
Authors:
STAUFFER L
VAN S
BOLMONT D
KOULMANN JJ
MINOT C
Citation: L. Stauffer et al., 1ST STAGES OF GE ADSORPTION ON THE SI(111)7X7 SURFACE - EXPERIMENTAL AND THEORETICAL-STUDIES, Surface science, 309, 1994, pp. 274-279