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Results: 1-9 |
Results: 9
MICROSTRUCTURAL CHARACTERIZATION OF ION-ASSISTED SIO2 THIN-FILMS BY VISIBLE AND INFRARED ELLIPSOMETRY
Authors: BRUNETBRUNEAU A SOUCHE D FISSON S VAN VN VUYE G ABELES F RIVORY J
Citation: A. Brunetbruneau et al., MICROSTRUCTURAL CHARACTERIZATION OF ION-ASSISTED SIO2 THIN-FILMS BY VISIBLE AND INFRARED ELLIPSOMETRY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2281-2286
VISIBLE AND INFRARED ELLIPSOMETRY STUDY OF ION-ASSISTED SIO2-FILMS
Authors: SOUCHE D BRUNETBRUNEAU A FISSON S VAN VN VUYE G ABELES F RIVORY J
Citation: D. Souche et al., VISIBLE AND INFRARED ELLIPSOMETRY STUDY OF ION-ASSISTED SIO2-FILMS, Thin solid films, 313, 1998, pp. 676-681
CORRELATION BETWEEN MICROSTRUCTURE AND THE OPTICAL-PROPERTIES OF TIO2THIN-FILMS PREPARED ON DIFFERENT SUBSTRATES
Authors: LEPRINCEWANG Y YUZHANG K VAN VN SOUCHE D RIVORY J
Citation: Y. Leprincewang et al., CORRELATION BETWEEN MICROSTRUCTURE AND THE OPTICAL-PROPERTIES OF TIO2THIN-FILMS PREPARED ON DIFFERENT SUBSTRATES, Thin solid films, 307(1-2), 1997, pp. 38-42
DETERMINATION OF REFRACTIVE-INDEX PROFILES BY A COMBINATION OF VISIBLE AND INFRARED ELLIPSOMETRY MEASUREMENTS
Authors: VAN VN BRUNETBRUNEAU A FISSON S FRIGERIO JM VUYE G WANG Y ABELES F RIVORY J BERGER M CHATON P
Citation: Vn. Van et al., DETERMINATION OF REFRACTIVE-INDEX PROFILES BY A COMBINATION OF VISIBLE AND INFRARED ELLIPSOMETRY MEASUREMENTS, Applied optics, 35(28), 1996, pp. 5540-5544
INITIAL-STAGES IN THE FORMATION OF PTSI ON SI(111) AS FOLLOWED BY PHOTOEMISSION AND SPECTROSCOPIC ELLIPSOMETRY
Authors: LEY L WANG Y VAN VN FISSON S SOUCHE D VUYE G RIVORY J
Citation: L. Ley et al., INITIAL-STAGES IN THE FORMATION OF PTSI ON SI(111) AS FOLLOWED BY PHOTOEMISSION AND SPECTROSCOPIC ELLIPSOMETRY, Thin solid films, 270(1-2), 1995, pp. 561-566
X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF THE GROWTH OF DIELECTRIC FILMS ON VARIOUS SUBSTRATES
Authors: WANG Y FISSON S VAN VN VUYE G YUZHANG K RIVORY J
Citation: Y. Wang et al., X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF THE GROWTH OF DIELECTRIC FILMS ON VARIOUS SUBSTRATES, Surface & coatings technology, 68, 1994, pp. 724-728
GROWTH OF LOW AND HIGH REFRACTIVE-INDEX DIELECTRIC LAYERS AS STUDIED BY IN-SITU ELLIPSOMETRY
Authors: VAN VN FISSON S FRIGERIO JM RIVORY J VUYE G WANG Y ABELES F
Citation: Vn. Van et al., GROWTH OF LOW AND HIGH REFRACTIVE-INDEX DIELECTRIC LAYERS AS STUDIED BY IN-SITU ELLIPSOMETRY, Thin solid films, 253(1-2), 1994, pp. 257-261
TEMPERATURE-DEPENDENCE OF THE DIELECTRIC FUNCTION OF SILICON USING IN-SITU SPECTROSCOPIC ELLIPSOMETRY
Authors: VUYE G FISSON S VAN VN WANG Y RIVORY J ABELES F
Citation: G. Vuye et al., TEMPERATURE-DEPENDENCE OF THE DIELECTRIC FUNCTION OF SILICON USING IN-SITU SPECTROSCOPIC ELLIPSOMETRY, Thin solid films, 233(1-2), 1993, pp. 166-170
STUDY OF CAF2 GROWTH ON SI, A-SIO2 BY IN-SITU SPECTROSCOPIC ELLIPSOMETRY
Authors: RIVORY J FISSON S VAN VN VUYE G WANG Y ABELES F YUZHANG K
Citation: J. Rivory et al., STUDY OF CAF2 GROWTH ON SI, A-SIO2 BY IN-SITU SPECTROSCOPIC ELLIPSOMETRY, Thin solid films, 233(1-2), 1993, pp. 260-263
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