Authors:
PARK DG
TAO M
REED J
SUZUE K
BOTCHKAREV AE
FAN Z
GAO GB
CHEY SJ
VANNOSTRAND J
CAHILL DG
MORKOC H
Citation: Dg. Park et al., GAAS-BASED METAL-INSULATOR-SEMICONDUCTOR STRUCTURES WITH LOW INTERFACE TRAPS USING MOLECULAR-BEAM EPITAXY AND CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 150(1-4), 1995, pp. 1275-1280