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Results: 1-7 |
Results: 7

Authors: LUGAND C BENYATTOU T GUILLOT G VENET T GENDRY M HOLLINGER G
Citation: C. Lugand et al., ELECTROABSORPTION MODULATOR USING A TYPE-II QUANTUM-WELL IN THE INXGA1-XAS INALAS/INP SYSTEM/, Superlattices and microstructures, 23(2), 1998, pp. 253-259

Authors: LUGAND C BENYATTOU T GUILLOT G VENET T GENDRY M HOLLINGER G SERMAGE B
Citation: C. Lugand et al., TYPE-II RECOMBINATION AND BAND-OFFSET DETERMINATION IN A TENSILE-STRAINED INGAAS QUANTUM-WELL, Applied physics letters, 70(24), 1997, pp. 3257-3259

Authors: KRAWCZYK SK GENDRY M KLINGELHOFER C VENET T BUCHHEIT M BLANCHET R HOLLINGER G
Citation: Sk. Krawczyk et al., APPLICATION OF SPECTRALLY RESOLVED SCANNING PHOTOLUMINESCENCE TO ASSESS RELAXATION PROCESSES OF INGAAS AND INALAS LAYERS STRAINED IN COMPRESSION AND TENSION, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 146-152

Authors: DELMEDICO S BENYATTOU T GUILLOT G GENDRY M OUSTRIC M VENET T TARDY J HOLLINGER G CHOVET A MATHIEU N
Citation: S. Delmedico et al., HIGHLY SENSITIVE IN0.75GA0.25AS ALINAS HALL SENSORS/, Semiconductor science and technology, 11(4), 1996, pp. 576-581

Authors: MAIGNE P GENDRY M VENET T TAHRI Y HOLLINGER G
Citation: P. Maigne et al., MEASUREMENT OF THE EXTENT OF STRAIN RELIEF IN INGAAS LAYERS GROWN UNDER TENSILE STRAIN ON INP(100) SUBSTRATES, Applied physics letters, 69(5), 1996, pp. 682-684

Authors: DELMEDICO S BENYATTOU T GUILLOT G GENDRY M OUSTRIC M VENET T TARDY J HOLLINGER G CHOVET A MATHIEU N
Citation: S. Delmedico et al., HIGH-SENSITIVITY HALL SENSORS USING GAINAS ALINAS PSEUDOMORPHIC HETEROSTRUCTURES/, Sensors and actuators. A, Physical, 46(1-3), 1995, pp. 298-301

Authors: HARRINGTON W PATARCA R BYRNES J CABRAL L LAI S VENET T COHEN J KLIMAS NG FLETCHER MA
Citation: W. Harrington et al., BASE-LINE CD8 COUNTS AS A PREDICTOR OF SURVIVAL IN PATIENTS WITH HIV-ASSOCIATED LYMPHOMAS UNDERGOING CHEMOTHERAPY, Blood, 82(10), 1993, pp. 10000566-10000566
Risultati: 1-7 |