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Results: 1-25/51
Authors:
VESCAN L
GRIMM K
DIEKER C
Citation: L. Vescan et al., FACET INVESTIGATION IN SELECTIVE EPITAXIAL-GROWTH OF SI AND SIGE ON (001)SI FOR OPTOELECTRONIC DEVICES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1549-1554
Authors:
VESCAN L
STOICA T
GORYLL M
GRIMM K
Citation: L. Vescan et al., SELECTIVE EPITAXIAL-GROWTH OF STRAINED SIGE SI FOR OPTOELECTRONIC DEVICES/, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 166-169
Authors:
POGOSSIAN SP
VESCAN L
VONSOVICI A
Citation: Sp. Pogossian et al., THE SINGLE-MODE CONDITION FOR SEMICONDUCTOR RIB WAVE-GUIDES WITH LARGE CROSS-SECTION, Journal of lightwave technology, 16(10), 1998, pp. 1851-1853
Authors:
VESCAN L
Citation: L. Vescan, LATERAL ORDERING OF GE ISLANDS ALONG FACETS, Journal of crystal growth, 194(2), 1998, pp. 173-177
Authors:
STOICA T
VESCAN L
GORYLL M
Citation: T. Stoica et al., ELECTROLUMINESCENCE OF STRAINED SIGE SI SELECTIVELY GROWN ABOVE THE CRITICAL THICKNESS FOR PLASTIC RELAXATION/, Journal of applied physics, 83(6), 1998, pp. 3367-3373
Authors:
TETELIN C
WALLART X
NYS JP
VESCAN L
GRAVESTEIJN DJ
Citation: C. Tetelin et al., KINETICS AND MECHANISM OF LOW-TEMPERATURE ATOMIC OXYGEN-ASSISTED OXIDATION OF SIGE LAYERS, Journal of applied physics, 83(5), 1998, pp. 2842-2846
Authors:
VONSOVICI A
VESCAN L
APETZ R
KOSTER A
SCHMIDT K
Citation: A. Vonsovici et al., ROOM-TEMPERATURE PHOTOCURRENT SPECTROSCOPY OF SIGE SI P-I-N PHOTODIODES GROWN BY SELECTIVE EPITAXY/, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 538-542
Authors:
KRUGER M
BERGER MG
MARSO M
REETZ W
EICKHOFF T
LOO R
VESCAN L
THONISSEN M
LUTH H
ARENSFISCHER R
HILBRICH S
THEISS W
Citation: M. Kruger et al., COLOR-SENSITIVE SI-PHOTODIODE USING POROUS SILICON INTERFERENCE FILTERS, JPN J A P 2, 36(1AB), 1997, pp. 24-26
Authors:
ZASTROW U
LOO R
SZOT R
MOERS J
GRABOLLA T
BEHAMMER D
VESCAN L
Citation: U. Zastrow et al., SIMS DEPTH PROFILING OF VERTICAL P-CHANNEL SI-MOS TRANSISTOR STRUCTURES, Fresenius' journal of analytical chemistry, 358(1-2), 1997, pp. 203-207
Authors:
HIGGS V
LIGHTOWLERS EC
APETZ R
VESCAN L
Citation: V. Higgs et al., CORRELATION BETWEEN OXYGEN DISTRIBUTION AND LUMINESCENCE EFFICIENCY IN SIGE SI LAYER STRUCTURES MEASURED BY CATHODOLUMINESCENCE IMAGING ANDSPECTROSCOPY/, Semiconductor science and technology, 12(4), 1997, pp. 409-412
Authors:
CHRETIEN O
APETZ R
SOUIFI A
VESCAN L
Citation: O. Chretien et al., SI1-XGEX SI VALENCE-BAND OFFSET DETERMINATION USING CURRENT-VOLTAGE CHARACTERISTICS/, Thin solid films, 294(1-2), 1997, pp. 198-200
Authors:
LOO R
VESCAN L
BEHAMMER D
MOERS J
GRABOLLA T
LANGEN W
KLAES D
ZASTROW U
KORDOS P
Citation: R. Loo et al., VERTICAL SI P-MOS TRANSISTOR SELECTIVELY GROWN BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 294(1-2), 1997, pp. 267-270
Authors:
VESCAN L
Citation: L. Vescan, STRAINED SIGE SI QUANTUM-WELL DOTS AND WIRES SELECTIVELY GROWN BY LPCVD AND THEIR OPTICAL-PROPERTIES/, Thin solid films, 294(1-2), 1997, pp. 284-290
Authors:
HOLLANDER B
VESCAN L
MESTERS S
WICKENHAUSER S
Citation: B. Hollander et al., STRAIN AND MISFIT DISLOCATION DENSITY IN FINITE LATERAL SIZE SI1-XGEXFILMS GROWN BY SELECTIVE EPITAXY, Thin solid films, 292(1-2), 1997, pp. 213-217
Authors:
VESCAN L
DIEKER C
SOUIFI A
STOICA T
Citation: L. Vescan et al., LATERAL CONFINEMENT BY LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION-BASED SELECTIVE EPITAXIAL-GROWTH OF SI1-XGEXSI NANOSTRUCTURES, Journal of applied physics, 81(10), 1997, pp. 6709-6715
Authors:
GORYLL M
VESCAN L
SCHMIDT K
MESTERS S
LUTH H
SZOT K
Citation: M. Goryll et al., SIZE DISTRIBUTION OF GE ISLANDS GROWN ON SI(001), Applied physics letters, 71(3), 1997, pp. 410-412
Authors:
WICKENHAUSER S
VESCAN L
SCHMIDT K
LUTH H
Citation: S. Wickenhauser et al., DETERMINATION OF THE ACTIVATION-ENERGY FOR THE HETEROGENEOUS NUCLEATION OF MISFIT DISLOCATIONS IN SI1-XGEX SI DEPOSITED BY SELECTIVE EPITAXY/, Applied physics letters, 70(3), 1997, pp. 324-326
Authors:
CHRETIEN O
APETZ R
VESCAN L
Citation: O. Chretien et al., IDENTIFICATION OF DISLOCATIONS IN N-TYPE SI SI0.88GE0.12/SI HETEROSTRUCTURES BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/, Semiconductor science and technology, 11(12), 1996, pp. 1838-1842
Authors:
TETELIN C
WALLART X
VESCAN L
NYS JP
Citation: C. Tetelin et al., PLASMA-ASSISTED OXIDATION OF SIGE LAYERS AT 500-DEGREES-C - INTERFACECHARACTERIZATION, Applied surface science, 104, 1996, pp. 385-391
Authors:
HARTMANN A
DIEKER C
BANGERT U
LOO R
VESCAN L
LUTH H
Citation: A. Hartmann et al., PHOTOLUMINESCENCE AND TRANSMISSION ELECTRON-MICROSCOPY INVESTIGATION OF SIGE QUANTUM WIRES GROWN ON PATTERNED SI SUBSTRATES, Applied surface science, 104, 1996, pp. 502-509
Authors:
CHRETIEN O
APETZ R
VESCAN L
SOUIFI A
LUTH H
Citation: O. Chretien et al., CAPTURE, STORAGE, AND EMISSION OF HOLES IN SI SI1-XGEX/SI QWS FOR THEDETERMINATION OF THE VALENCE-BAND OFFSET BY DLTS/, Applied surface science, 102, 1996, pp. 237-241
Authors:
LANGEN W
VESCAN L
LOO R
LUTH H
KORDOS P
Citation: W. Langen et al., VERTICAL 100 NM SI-P CHANNEL JFET GROWN BY SELECTIVE EPITAXY, Applied surface science, 102, 1996, pp. 252-254
Authors:
SOUIFI A
VESCAN L
LOO R
GARTNER P
DIEKER C
HARTMANN A
LUTH H
Citation: A. Souifi et al., INTENSE PHOTOLUMINESCENCE FROM STRAINED SIGE SUB-100 NM WIRES SELECTIVELY GROWN ON SI BY LPCVD, Applied surface science, 102, 1996, pp. 381-384
Authors:
POPESCU C
APETZ R
VESCAN L
Citation: C. Popescu et al., LOCAL ACTIVATION-ENERGY AND SHAPE FACTOR OF CURRENT-VOLTAGE CURVE AS INVESTIGATION TOOLS FOR SEMICONDUCTOR BARRIER STRUCTURES, Journal of applied physics, 80(10), 1996, pp. 5791-5798
Authors:
CHRETIEN O
SOUIFI A
APETZ R
VESCAN L
LUTH H
POPESCU C
Citation: O. Chretien et al., DETERMINATION OF VALENCE-BAND OFFSETS FROM SI SI1-XGEX/SI USING TEMPERATURE-DEPENDENT CURRENT-VOLTAGE CHARACTERISTICS/, Journal of applied physics, 79(5), 1996, pp. 2463-2466