Authors:
ONISHI S
NAGATA M
MITARAI S
ITO Y
KUDO J
SAKIYAMA K
DESU SB
BHATT HD
VIJAY DP
HWANG Y
Citation: S. Onishi et al., HIGH-TEMPERATURE BARRIER ELECTRODE TECHNOLOGY FOR HIGH-DENSITY FERROELECTRIC MEMORIES WITH STACKED CAPACITOR STRUCTURE, Journal of the Electrochemical Society, 145(7), 1998, pp. 2563-2568
Citation: W. Pan et al., REACTIVE ION ETCHING OF PBZR1-XTIXO3 AND RUO2 FILMS BY ENVIRONMENTALLY SAFE GASES, Journal of materials research, 9(11), 1994, pp. 2976-2980
Citation: La. Bursill et al., COMPARISON OF LEAD-ZIRCONATE-TITANATE THIN-FILMS ON RUTHENIUM OXIDE AND PLATINUM-ELECTRODES, Journal of applied physics, 75(3), 1994, pp. 1521-1525
Citation: Ck. Kwok et al., MODIFIED SOL-GEL PROCESS FOR PREPARATION OF LEAD-ZIRCONATE-TITANATE THIN-FILMS, Ferroelectrics. Letters section, 16(5-6), 1993, pp. 143-156
Citation: Dp. Vijay et al., REACTIVE ION ETCHING OF LEAD-ZIRCONATE-TITANATE (PZT) THIN-FILM CAPACITORS, Journal of the Electrochemical Society, 140(9), 1993, pp. 2635-2639
Citation: Dp. Vijay et Sb. Desu, ELECTRODES FOR PBZRXTI1-XO3 FERROELECTRIC THIN-FILMS, Journal of the Electrochemical Society, 140(9), 1993, pp. 2640-2645