Authors: ROSNER W HOFMANN F VOGELSANG T RISCH L

Citation: W. Rosner et al., SIMULATION OF SINGLE-ELECTRON CIRCUITS, Microelectronic engineering, 27(1-4), 1995, pp. 55-58

Authors: ABRAMO A BAUDRY L BRUNETTI R CASTAGNE R CHAREF M DESSENNE F DOLLFUS P DUTTON R ENGL WL FAUQUEMBERGUE R FIEGNA C FISCHETTI MV GALDIN S GOLDSMAN N HACKEL M HAMAGUCHI C HESS K HENNACY K HESTO P HIGMAN JM IIZUKA T JUNGEMANN C KAMAKURA Y KOSINA H KUNIKIYO T LAUX SE LIM HC MAZIAR C MIZUNO H PEIFER HJ RAMASWAMY S SANO N SCORBOHACI PG SELBERHERR S TAKENAKA M TANG TW TANIGUCHI K THOBEL JL THOMA R TOMIZAWA K TOMIPZAWA M VOGELSANG T WANG SL WANG XL YAO CS YODER PD YOSHII A

Citation: A. Abramo et al., A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1646-1654

Authors: VOGELSANG T

Citation: T. Vogelsang, WHAT YOU WILL, Die Fleischwirtschaft, 74(11), 1994, pp. 1127-1127

Authors: VOGELSANG T HOFMANN KR

Citation: T. Vogelsang et Kr. Hofmann, ELECTRON-TRANSPORT IN STRAINED SI LAYERS ON SI1-XGEX SUBSTRATES, Applied physics letters, 63(2), 1993, pp. 186-188