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Results: 1-11 |
Results: 11
TEMPERATURE-DEPENDENCE OF THE MAGNETIC-SUSCEPTIBILITY IN IV-VI SEMICONDUCTORS
Authors: VOLKOV BA RUCHAISKII OM
Citation: Ba. Volkov et Om. Ruchaiskii, TEMPERATURE-DEPENDENCE OF THE MAGNETIC-SUSCEPTIBILITY IN IV-VI SEMICONDUCTORS, Physics of the solid state, 40(1), 1998, pp. 50-54
ORDER-PARAMETER ANISOTROPY CAUSED BY THE SYMMETRY PROPERTIES OF COUPLING MATRIX ELEMENT 2-BAND MODEL OF A SUPERCONDUCTOR
Authors: ARSEYEV PI FEDOROV NK VOLKOV BA
Citation: Pi. Arseyev et al., ORDER-PARAMETER ANISOTROPY CAUSED BY THE SYMMETRY PROPERTIES OF COUPLING MATRIX ELEMENT 2-BAND MODEL OF A SUPERCONDUCTOR, Solid state communications, 100(8), 1996, pp. 581-584
PERIODICAL STRUCTURE-BASED ON FERROELECTRIC DOMAIN-WALLS
Authors: VOLKOV BA KARAGANTCHOU I
Citation: Ba. Volkov et I. Karagantchou, PERIODICAL STRUCTURE-BASED ON FERROELECTRIC DOMAIN-WALLS, Superlattices and microstructures, 17(2), 1995, pp. 241-242
DYNAMICAL SUPERLATTICE
Authors: VOLKOV BA KARAGANTCHOU I
Citation: Ba. Volkov et I. Karagantchou, DYNAMICAL SUPERLATTICE, Superlattices and microstructures, 17(2), 1995, pp. 243-244
QUANTUM CONDUCTIVITY OF PB1-XSNXSE METAL- NARROW-GAP SEMICONDUCTOR MICROCONTACTS
Authors: VOLKOV BA DAVYDOV DN SVISTOV AE CHIZHEVSKII EG
Citation: Ba. Volkov et al., QUANTUM CONDUCTIVITY OF PB1-XSNXSE METAL- NARROW-GAP SEMICONDUCTOR MICROCONTACTS, Fizika tverdogo tela, 37(9), 1995, pp. 2856-2858
NATURE OF DEFECT LEVELS IN A(4)B(6) SEMIC ONDUCTING COMPOUNDS
Authors: VOLKOV BA SHAPOVALOV VV
Citation: Ba. Volkov et Vv. Shapovalov, NATURE OF DEFECT LEVELS IN A(4)B(6) SEMIC ONDUCTING COMPOUNDS, Fizika tverdogo tela, 37(11), 1995, pp. 3487-3492
INTERFACE STATES IN INHOMOGENEOUS SEMICON DUCTOR STRUCTURES
Authors: VOLKOV BA IDLIS BG USMANOV MS
Citation: Ba. Volkov et al., INTERFACE STATES IN INHOMOGENEOUS SEMICON DUCTOR STRUCTURES, Uspehi fiziceskih nauk, 165(7), 1995, pp. 799-810
COULOMB SHIFT OF THE PHOTOEMISSION THRESHOLD IN CRYSTALS
Authors: VOLKOV BA SHAROV SV
Citation: Ba. Volkov et Sv. Sharov, COULOMB SHIFT OF THE PHOTOEMISSION THRESHOLD IN CRYSTALS, JETP letters, 62(8), 1995, pp. 657-661
INTRACENTER COULOMB CORRELATIONS, CHARGE STATES, AND SPECTRUM OF GROUP-III IMPURITIES IN IV-VI NARROW-GAP SEMICONDUCTORS
Authors: VOLKOV BA RUCHAISKII OM
Citation: Ba. Volkov et Om. Ruchaiskii, INTRACENTER COULOMB CORRELATIONS, CHARGE STATES, AND SPECTRUM OF GROUP-III IMPURITIES IN IV-VI NARROW-GAP SEMICONDUCTORS, JETP letters, 62(3), 1995, pp. 217-222
NATURE AND CHARGE STATES OF A GA IMPURITY IN PBTE
Authors: VASILEV AN VOLOSHOK TN VOLKOV BA KUVSHINNIKOV SV
Citation: An. Vasilev et al., NATURE AND CHARGE STATES OF A GA IMPURITY IN PBTE, JETP letters, 61(9), 1995, pp. 786-791
BAND INVERSION IN A(4)B(6) SEMICONDUCTORSDUE TO LOCAL STRESS OR COMPOSITION FLUCTUATIONS
Authors: VOLKOV BA SVISTOV AE
Citation: Ba. Volkov et Ae. Svistov, BAND INVERSION IN A(4)B(6) SEMICONDUCTORSDUE TO LOCAL STRESS OR COMPOSITION FLUCTUATIONS, Fizika tverdogo tela, 35(2), 1993, pp. 277-284
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