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Results: 1-3 |
Results: 3
ION-IMPLANTATION OF A DONOR IMPURITY IN INDIUM-PHOSPHIDE
Authors: GALINA TM VOLODKO VG DEMIDOV ES PODCHISHCHAEVA OV
Citation: Tm. Galina et al., ION-IMPLANTATION OF A DONOR IMPURITY IN INDIUM-PHOSPHIDE, Semiconductors, 27(8), 1993, pp. 762-763
CALCULATION OF SPECIAL REGIMES OF IONIC I MPLANTATION AND INITIALLY KNOCKED-OUT ATOMS IN SUPERCONDUCTORS UNDER OXYGEN-ION BOMBARDMENT
Authors: VOLODKO VG GOLUBEVA NG
Citation: Vg. Volodko et Ng. Golubeva, CALCULATION OF SPECIAL REGIMES OF IONIC I MPLANTATION AND INITIALLY KNOCKED-OUT ATOMS IN SUPERCONDUCTORS UNDER OXYGEN-ION BOMBARDMENT, Zurnal tehniceskoj fiziki, 63(11), 1993, pp. 187-192
EFFECT OF CARBON-TETRACHLORIDE ON THE SELECTIVE GROWTH OF GALLIUM-ARSENIDE LAYERS IN THE MOC HYDRIDE PROCESS
Authors: VOLODKO VG ZVONKOV BN ZNYSHEVA LN PORTNOV VN
Citation: Vg. Volodko et al., EFFECT OF CARBON-TETRACHLORIDE ON THE SELECTIVE GROWTH OF GALLIUM-ARSENIDE LAYERS IN THE MOC HYDRIDE PROCESS, Inorganic materials, 29(3), 1993, pp. 469-471
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