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Results: 1-9 |
Results: 9
DIAMOND MICROCOMPONENTS SHAPE UP
Authors: VONWINDHEIM JA
Citation: Ja. Vonwindheim, DIAMOND MICROCOMPONENTS SHAPE UP, Physics world, 8(3), 1995, pp. 28-28
COMPARISON OF THE ELECTRICAL-PROPERTIES OF SIMULTANEOUSLY DEPOSITED HOMOEPITAXIAL AND POLYCRYSTALLINE DIAMOND FILMS
Authors: MALTA DM VONWINDHEIM JA WYNANDS HA FOX BA
Citation: Dm. Malta et al., COMPARISON OF THE ELECTRICAL-PROPERTIES OF SIMULTANEOUSLY DEPOSITED HOMOEPITAXIAL AND POLYCRYSTALLINE DIAMOND FILMS, Journal of applied physics, 77(4), 1995, pp. 1536-1545
EFFECT OF NATIVE SIO2 LAYER ON THE NUCLEATION OF DIAMOND USING A COMBUSTION-FLAME
Authors: MCCLURE MT VONWINDHEIM JA GLASS JT PRATER JT
Citation: Mt. Mcclure et al., EFFECT OF NATIVE SIO2 LAYER ON THE NUCLEATION OF DIAMOND USING A COMBUSTION-FLAME, DIAMOND AND RELATED MATERIALS, 3(3), 1994, pp. 239-244
IMPURITY-CHARACTERIZATION AGREEMENT IN TYPE-IIB SINGLE-CRYSTAL DIAMOND BY HIGH-TEMPERATURE HALL-EFFECT, CAPACITANCE-VOLTAGE, AND SECONDARY-ION MASS-SPECTROSCOPY MEASUREMENTS
Authors: WYNANDS HA MALTA DM FOX BA VONWINDHEIM JA FLEURIAL JP IRVINE D VANDERSANDE J
Citation: Ha. Wynands et al., IMPURITY-CHARACTERIZATION AGREEMENT IN TYPE-IIB SINGLE-CRYSTAL DIAMOND BY HIGH-TEMPERATURE HALL-EFFECT, CAPACITANCE-VOLTAGE, AND SECONDARY-ION MASS-SPECTROSCOPY MEASUREMENTS, Physical review. B, Condensed matter, 49(8), 1994, pp. 5745-5748
APPLICATION OF ION-ASSISTED ELECTRON-BEAM METALLIZATION TO DIAMOND ELECTRONICS
Authors: MAYNARD L VENKATESAN V VONWINDHEIM JA THOMPSON DG
Citation: L. Maynard et al., APPLICATION OF ION-ASSISTED ELECTRON-BEAM METALLIZATION TO DIAMOND ELECTRONICS, Thin solid films, 238(1), 1994, pp. 37-43
DEEP-LEVEL EFFECTS ON FORWARD CHARACTERISTICS OF RECTIFYING CONTACTS ON SEMICONDUCTING DIAMOND
Authors: VENKATESAN V VONWINDHEIM JA DAS K
Citation: V. Venkatesan et al., DEEP-LEVEL EFFECTS ON FORWARD CHARACTERISTICS OF RECTIFYING CONTACTS ON SEMICONDUCTING DIAMOND, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1556-1558
EFFECT OF BACK CONTACT IMPEDANCE ON FREQUENCY-DEPENDENCE OF CAPACITANCE-VOLTAGE MEASUREMENTS ON METAL DIAMOND DIODES
Authors: VENKATESAN V DAS K VONWINDHEIM JA GEIS MW
Citation: V. Venkatesan et al., EFFECT OF BACK CONTACT IMPEDANCE ON FREQUENCY-DEPENDENCE OF CAPACITANCE-VOLTAGE MEASUREMENTS ON METAL DIAMOND DIODES, Applied physics letters, 63(8), 1993, pp. 1065-1067
HIGH-CONDUCTANCE, LOW-LEAKAGE DIAMOND SCHOTTKY DIODES
Authors: GEIS MW EFREMOW NN VONWINDHEIM JA
Citation: Mw. Geis et al., HIGH-CONDUCTANCE, LOW-LEAKAGE DIAMOND SCHOTTKY DIODES, Applied physics letters, 63(7), 1993, pp. 952-954
COMPARISON OF ELECTRONIC TRANSPORT IN BORON-DOPED HOMOEPITAXIAL, POLYCRYSTALLINE, AND NATURAL SINGLE-CRYSTAL DIAMOND
Authors: MALTA DM VONWINDHEIM JA FOX BA
Citation: Dm. Malta et al., COMPARISON OF ELECTRONIC TRANSPORT IN BORON-DOPED HOMOEPITAXIAL, POLYCRYSTALLINE, AND NATURAL SINGLE-CRYSTAL DIAMOND, Applied physics letters, 62(23), 1993, pp. 2926-2928
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