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Results:
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Results: 2
Breaking through the electrical saturation barrier: 2D-versus 3D-doping inn-type silicon
Authors:
Citrin, PH Muller, D Gossmann, HJ Vanfleet, R Northrup, PA
Citation:
Ph. Citrin et al., Breaking through the electrical saturation barrier: 2D-versus 3D-doping inn-type silicon, PHYSICA B, 274, 1999, pp. 251-255
Geometric frustration of 2D dopants in silicon: Surpassing electrical saturation
Authors:
Citrin, PH Muller, DA Gossmann, HJ Vanfleet, R Northrup, PA
Citation:
Ph. Citrin et al., Geometric frustration of 2D dopants in silicon: Surpassing electrical saturation, PHYS REV L, 83(16), 1999, pp. 3234-3237
Risultati:
1-2
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