Authors: Dauksher, WJ Clemens, SB Resnick, DJ Smith, KH Mangat, PJS Rauf, S Ventzek, PLG Arunachalam, V Ramamurthi, BN Ashraf, H Lea, L Hall, S Johnston, IR Hopkins, J Bhardwaj, JK

Citation: Wj. Dauksher et al., Deep silicon etch modeling for fabrication of 200-mm SCALPEL masks, MICROEL ENG, 57-8, 2001, pp. 607-612

Authors: Arunachalam, V Rauf, S Coronell, DG Ventzek, PLG

Citation: V. Arunachalam et al., Integrated multi-scale model for ionized plasma physical vapor deposition, J APPL PHYS, 90(1), 2001, pp. 64-73

Authors: Rauf, S Ventzek, PLG Arunachalam, V

Citation: S. Rauf et al., Ionized physical vapor deposition of Cu on 300 mm wafers: A modeling study, J APPL PHYS, 89(5), 2001, pp. 2525-2534

Authors: Rauf, S Ventzek, PLG

Citation: S. Rauf et Plg. Ventzek, Ionized physical vapor deposition of Cu using a mixture of rare gases, J APPL PHYS, 89(5), 2001, pp. 2535-2538

Authors: Wright, OB Ventzek, PLG Gusev, VE

Citation: Ob. Wright et al., Electron-phonon dynamics in metals on ultrashort timescales, PHYSICA B, 263, 1999, pp. 193-195

Authors: Nakamura, S Ventzek, PLG Kitamori, K

Citation: S. Nakamura et al., Monte Carlo simulation study of the scaling of electron transport parameters in crossed dc electric and magnetic fields, J APPL PHYS, 85(5), 1999, pp. 2534-2539