Authors: Vernon-Parry, KD Abd-El-Rahman, KF Brough, I Evans-Freeman, JH Zhang, J Peaker, AR

Citation: Kd. Vernon-parry et al., The use of electron back-scattered diffraction to study the regrowth of amorphised silicon-based heterostructures, MAT SC S PR, 4(1-3), 2001, pp. 121-123

Authors: Vernon-Parry, KD Evans-Freeman, JH Hawkins, ID Peaker, AR Dawson, P

Citation: Kd. Vernon-parry et al., Separation of dislocation- and erbium-related photoluminescence by time resolved studies, MAT SCI E B, 81(1-3), 2001, pp. 56-58

Authors: Vernon-Parry, KD Hawkins, ID Evans-Freeman, JH Dawson, P Peaker, AR

Citation: Kd. Vernon-parry et al., A comparison of the photoluminescence decay of erbium in silicon and silicon-germanium, MAT SCI E B, 81(1-3), 2001, pp. 164-166

Authors: Vernon-Parry, KD Evans-Freeman, JH Hawkins, ID Dawson, P Peaker, AR

Citation: Kd. Vernon-parry et al., Effect of dislocations on the photoluminescence decay of 1.54 mu m emission from erbium-doped silicon, J APPL PHYS, 89(5), 2001, pp. 2715-2719

Authors: Naveed, AT Evans-Freeman, JH Vernon-Parry, KD Wright, AC Houghton, DC Peaker, AR

Citation: At. Naveed et al., Erbium-doped Si1-xGex/Si structures for light emitting diodes, SEMIC SCI T, 15(2), 2000, pp. 91-97

Authors: Peaker, AR Evans-Freeman, JH Kan, PYY Rubaldo, L Hawkins, ID Vernon-Parry, KD Dobaczewski, L

Citation: Ar. Peaker et al., Hydrogen reactions with electron irradiation damage in silicon, PHYSICA B, 274, 1999, pp. 243-246