Authors:
Butte, R
Vignoli, S
Meaudre, M
Meaudre, R
Marty, O
Saviot, L
Cabarrocas, PRI
Citation: R. Butte et al., Structural, optical and electronic properties of hydrogenated polymorphoussilicon films deposited at 150 degrees C, J NON-CRYST, 266, 2000, pp. 263-268
Authors:
Butte, R
Meaudre, R
Meaudre, M
Vignoli, S
Longeaud, C
Kleider, JP
Cabarrocas, PRI
Citation: R. Butte et al., Some electronic and metastability properties of a new nanostructured material: hydrogenated polymorphous silicon, PHIL MAG B, 79(7), 1999, pp. 1079-1095
Authors:
Vignoli, S
Butte, R
Meaudre, R
Meaudre, M
Cabarrocas, PRI
Citation: S. Vignoli et al., Structural properties depicted by optical measurements in hydrogenated polymorphous silicon, J PHYS-COND, 11(44), 1999, pp. 8749-8757
Authors:
Meaudre, R
Meaudre, M
Butte, R
Vignoli, S
Citation: R. Meaudre et al., Determination of the midgap density of states and capture cross-sections in polymorphous silicon by space-charge-limited conductivity and relaxation, PHIL MAG L, 79(9), 1999, pp. 763-769
Authors:
Kleider, JP
Longeaud, C
Gauthier, M
Meaudre, M
Meaudre, R
Butte, R
Vignoli, S
Cabarrocas, PRI
Citation: Jp. Kleider et al., Very low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space-charge-limited current measurements, APPL PHYS L, 75(21), 1999, pp. 3351-3353