AAAAAA

   
Results: 1-9 |
Results: 9
Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces
Authors: Ledentsov, NN Litvinov, D Rosenauer, A Gerthsen, D Soshnikov, IP Shchukin, VA Ustinov, VM Egorov, AY Zukov, AE Volodin, VA Efremov, MD Preobrazhenskii, VV Semyagin, BP Bimberg, D Alferov, ZI
Citation: Nn. Ledentsov et al., Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces, J ELEC MAT, 30(5), 2001, pp. 463-470
Formation of photoluminescence centers during annealing of SiO2 layers implanted with Ge ions
Authors: Kachurin, GA Rebohle, L Tyschenko, IE Volodin, VA Voelskow, M Skorupa, W Froeb, H
Citation: Ga. Kachurin et al., Formation of photoluminescence centers during annealing of SiO2 layers implanted with Ge ions, SEMICONDUCT, 34(1), 2000, pp. 21-26
Transverse optical phonon splitting in GaAs/AlAs superlattices grown on the GaAs(311) surface studied by the method of Raman light scattering
Authors: Volodin, VA Efremov, MD Preobrazhenskii, VV Semyagin, BR Bolotov, VV Sachkov, VA
Citation: Va. Volodin et al., Transverse optical phonon splitting in GaAs/AlAs superlattices grown on the GaAs(311) surface studied by the method of Raman light scattering, SEMICONDUCT, 34(1), 2000, pp. 61-66
Phonon-plasmon interaction in tunneling GaAs/AlAs superlattices
Authors: Volodin, VA Efremov, MD Preobrazhenskii, VV Semyagin, BR Bolotov, VV Sachkov, VA Galaktionov, EA Kretinin, AV
Citation: Va. Volodin et al., Phonon-plasmon interaction in tunneling GaAs/AlAs superlattices, JETP LETTER, 71(11), 2000, pp. 477-480
Photoluminescence of Si3N4 films implanted with Ge+ and Ar+ ions
Authors: Tyschenko, IE Volodin, VA Rebohle, L Voelskov, M Skorupa, V
Citation: Ie. Tyschenko et al., Photoluminescence of Si3N4 films implanted with Ge+ and Ar+ ions, SEMICONDUCT, 33(5), 1999, pp. 523-528
Raman study of confined TO phonons in GaAs/AlAs superlattices grown on GaAs (311)A and B surfaces
Authors: Volodin, VA Efremov, MD Preobrazhenskii, VV Semyagin, BR Bolotov, VV
Citation: Va. Volodin et al., Raman study of confined TO phonons in GaAs/AlAs superlattices grown on GaAs (311)A and B surfaces, SUPERLATT M, 26(1), 1999, pp. 11-16
Lateral localization of optical phonons in GaAs quantum islands
Authors: Efremov, MD Volodin, VA Preobrazhenskii, VV Semyagin, BR Sachkov, VA Bolotov, VV Galaktionov, EA Kretinin, AV
Citation: Md. Efremov et al., Lateral localization of optical phonons in GaAs quantum islands, JETP LETTER, 70(2), 1999, pp. 75-81
Effect of ion dose and annealing mode on photoluminescence from SiO2 implanted with Si ions
Authors: Kachurin, GA Leier, AF Zhuravlev, KS Tyschenko, IE Gutakovskii, AK Volodin, VA Skorupa, W Yankov, RA
Citation: Ga. Kachurin et al., Effect of ion dose and annealing mode on photoluminescence from SiO2 implanted with Si ions, SEMICONDUCT, 32(11), 1998, pp. 1222-1228
Raman study of silicon nanocrystals formed in SINx films by excimer laser or thermal annealing
Authors: Volodin, VA Efremov, MD Gritsenko, VA Kochubei, SA
Citation: Va. Volodin et al., Raman study of silicon nanocrystals formed in SINx films by excimer laser or thermal annealing, APPL PHYS L, 73(9), 1998, pp. 1212-1214
Risultati: 1-9 |