Authors: Vuong, HH Rafferty, CS Eshraghi, SA Ning, J McMacken, JR Chaudhry, S McKinley, J Stevie, FA

Citation: Hh. Vuong et al., Dopant dose loss at the Si-SiO2 interface, J VAC SCI B, 18(1), 2000, pp. 428-434

Authors: Vuong, HH Chang, CP Pai, CS

Citation: Hh. Vuong et al., Design of 25-nm SALVO PMOS devices, IEEE ELEC D, 21(5), 2000, pp. 248-250

Authors: Vuong, HH Xie, YH Frei, MR Hobler, G Pelaz, L Rafferty, CS

Citation: Hh. Vuong et al., Use of transient enhanced diffusion to tailor boron out-diffusion, IEEE DEVICE, 47(7), 2000, pp. 1401-1405

Authors: Vuong, HH Bude, J Baumann, FH Evans-Lutterodt, K Ning, J Ma, Y Mcmacken, J Gossmann, HJ Silverman, P Rafferty, CS Hillenius, SJ

Citation: Hh. Vuong et al., Effect of implant damage on the gate oxide thickness, SOL ST ELEC, 43(5), 1999, pp. 985-988

Authors: Vuong, HH Gossmann, HJ Pelaz, L Celler, GK Jacobson, DC Barr, D Hergenrother, J Monroe, D Venezia, VC Rafferty, CS Hillenius, SJ McKinley, J Stevie, FA Granger, C

Citation: Hh. Vuong et al., Boron pileup and clustering in silicon-on-insulator films, APPL PHYS L, 75(8), 1999, pp. 1083-1085