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Results: 1-9 |
Results: 9
MULTIWAFER MOVPE TECHNOLOGY FOR LOW-DIMENSIONAL GA-AL-IN-N STRUCTURES
Authors: BECCARD R NIEBUHR R WACHTENDORF B SCHMITZ D JURGENSEN H
Citation: R. Beccard et al., MULTIWAFER MOVPE TECHNOLOGY FOR LOW-DIMENSIONAL GA-AL-IN-N STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 39-43
PLASMA CLEANING AND NITRIDATION OF SAPPHIRE SUBSTRATES FOR ALXGA1-XN EPITAXY AS STUDIED BY X-RAY PHOTOELECTRON DIFFRACTION
Authors: SEELMANNEGGEBERT M ZIMMERMANN H OBLOH H NIEBUHR R WACHTENDORF B
Citation: M. Seelmanneggebert et al., PLASMA CLEANING AND NITRIDATION OF SAPPHIRE SUBSTRATES FOR ALXGA1-XN EPITAXY AS STUDIED BY X-RAY PHOTOELECTRON DIFFRACTION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2008-2015
MOVPE PRODUCTION REACTORS FOR HIGH-TEMPERATURE ELECTRONICS
Authors: PROTZMANN H WACHTENDORF B SCHOEN O SCHMITZ D STRAUCH G JUERGENSEN H
Citation: H. Protzmann et al., MOVPE PRODUCTION REACTORS FOR HIGH-TEMPERATURE ELECTRONICS, Journal of electronic materials, 27(4), 1998, pp. 342-344
EFFICIENT AND UNIFORM PRODUCTION OF III-NITRIDE FILMS BY MULTIWAFER MOVPE
Authors: DESCHLER M BECCARD R WACHTENDORF B SCHMITZ D JUERGENSEN H
Citation: M. Deschler et al., EFFICIENT AND UNIFORM PRODUCTION OF III-NITRIDE FILMS BY MULTIWAFER MOVPE, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 1-7
AL-GA-IN-NITRIDE HETEROSTRUCTURES - MOVPE GROWTH IN PRODUCTION REACTORS AND CHARACTERIZATION
Authors: BECCARD R SCHOEN O WACHTENDORF B SCHMITZ D JUERGENSEN H WOELK E
Citation: R. Beccard et al., AL-GA-IN-NITRIDE HETEROSTRUCTURES - MOVPE GROWTH IN PRODUCTION REACTORS AND CHARACTERIZATION, Journal of electronic materials, 26(10), 1997, pp. 1123-1126
TEMPERATURE AND EXCITATION DEPENDENT PHOTOLUMINESCENCE OF UNDOPED ANDNITROGEN-DOPED ZNSE EPILAYERS
Authors: GURSKII AL GAVRILENKO AN LUTSENKO EV YABLONSKII GP TAUDT W HAMADEH H WACHTENDORF B SOLLNER J SCHMORANZER J HEUKEN M
Citation: Al. Gurskii et al., TEMPERATURE AND EXCITATION DEPENDENT PHOTOLUMINESCENCE OF UNDOPED ANDNITROGEN-DOPED ZNSE EPILAYERS, Physica status solidi. b, Basic research, 193(1), 1996, pp. 257-267
LOW-TEMPERATURE GROWTH AND PLANAR DOPING OF ZNSE IN A PLASMA-STIMULATED LP-MOVPE SYSTEM
Authors: TAUDT W WACHTENDORF B SAUERLANDER F HAMADEH H LAMPE S HEUKEN M
Citation: W. Taudt et al., LOW-TEMPERATURE GROWTH AND PLANAR DOPING OF ZNSE IN A PLASMA-STIMULATED LP-MOVPE SYSTEM, Journal of electronic materials, 24(11), 1995, pp. 1671-1675
OXYGEN AND TELLURIUM IMPURITIES IN ZINC SELENIDE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
Authors: GURSKII AL VAKARELSKA K TAUDT W WACHTENDORF B SOLLNER J WAHID A HEUKEN M
Citation: Al. Gurskii et al., OXYGEN AND TELLURIUM IMPURITIES IN ZINC SELENIDE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 146(1-4), 1995, pp. 592-598
LOW-TEMPERATURE GROWTH AND NITROGEN DOPING OF ZNSE USING DIETHYLZINC AND DITERTIARYBUTYLSELENIDE IN A PLASMA-STIMULATED LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY SYSTEM
Authors: TAUDT W WACHTENDORF B BECCARD R WAHID A HEUKEN M GURSKII AL VAKARELSKA K
Citation: W. Taudt et al., LOW-TEMPERATURE GROWTH AND NITROGEN DOPING OF ZNSE USING DIETHYLZINC AND DITERTIARYBUTYLSELENIDE IN A PLASMA-STIMULATED LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY SYSTEM, Journal of crystal growth, 145(1-4), 1994, pp. 582-588
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