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DISPERSION OF MOS CAPACITANCE-VOLTAGE CHARACTERISTICS RESULTING FROM THE RANDOM CHANNEL DOPANT ION DISTRIBUTION
Authors:
WATT JT PLUMMER JD
Citation:
Jt. Watt et Jd. Plummer, DISPERSION OF MOS CAPACITANCE-VOLTAGE CHARACTERISTICS RESULTING FROM THE RANDOM CHANNEL DOPANT ION DISTRIBUTION, I.E.E.E. transactions on electron devices, 41(11), 1994, pp. 2222-2232
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