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Results: 1-15 |
Results: 15
SEU DESIGN CONSIDERATIONS FOR MESFETS ON LT GAAS
Authors: WEATHERFORD TR RADICE R ESKINS D DEVERS J FOUTS DJ MARSHALL PW MARSHALL CJ DIETRICH H TWIGG M MILANO R
Citation: Tr. Weatherford et al., SEU DESIGN CONSIDERATIONS FOR MESFETS ON LT GAAS, IEEE transactions on nuclear science, 44(6), 1997, pp. 2282-2289
EFFECTS OF LOW-TEMPERATURE BUFFER-LAYER THICKNESS AND GROWTH TEMPERATURE ON THE SEE SENSITIVITY OF GAAS HIGFET CIRCUITS
Authors: WEATHERFORD TR MARSHALL PW MARSHALL CJ FOUTS DJ MATHES B LAMACCHIA M
Citation: Tr. Weatherford et al., EFFECTS OF LOW-TEMPERATURE BUFFER-LAYER THICKNESS AND GROWTH TEMPERATURE ON THE SEE SENSITIVITY OF GAAS HIGFET CIRCUITS, IEEE transactions on nuclear science, 44(6), 1997, pp. 2298-2305
CHARGE-COLLECTION CHARACTERISTICS OF GAAS HETEROSTRUCTURE FETS FABRICATED WITH A LOW-TEMPERATURE-GROWN GAAS BUFFER LAYER
Authors: MCMORROW D WEATHERFORD TR KNUDSON AR BUCHNER S MELINGER JS TRAN LH CAMPBELL AB MARSHALL PW DALE CJ PECZALSKI A BAIER S
Citation: D. Mcmorrow et al., CHARGE-COLLECTION CHARACTERISTICS OF GAAS HETEROSTRUCTURE FETS FABRICATED WITH A LOW-TEMPERATURE-GROWN GAAS BUFFER LAYER, IEEE transactions on nuclear science, 43(3), 1996, pp. 918-923
SINGLE-EVENT PHENOMENA IN GAAS DEVICES AND CIRCUITS
Authors: MCMORROW D WEATHERFORD TR BUCHNER S KNUDSON AR MELINGER JS TRAN LH CAMPBELL AB
Citation: D. Mcmorrow et al., SINGLE-EVENT PHENOMENA IN GAAS DEVICES AND CIRCUITS, IEEE transactions on nuclear science, 43(2), 1996, pp. 628-644
CHARGE COLLECTION IN GAAS-MESFETS FABRICATED IN SEMIINSULATING SUBSTRATES
Authors: SCHWANK JR SEXTON FW WEATHERFORD TR MCMORROW D KNUDSON AR MELINGER JS
Citation: Jr. Schwank et al., CHARGE COLLECTION IN GAAS-MESFETS FABRICATED IN SEMIINSULATING SUBSTRATES, IEEE transactions on nuclear science, 42(6), 1995, pp. 1585-1591
SINGLE EVENT UPSETS IN GALLIUM-ARSENIDE PSEUDO-COMPLEMENTARY MESFET LOGIC
Authors: FOUTS DJ WEATHERFORD TR MCMORROW D WOLFE K VANDYK SE MELINGER JS TRAN LH CAMPBELL AB
Citation: Dj. Fouts et al., SINGLE EVENT UPSETS IN GALLIUM-ARSENIDE PSEUDO-COMPLEMENTARY MESFET LOGIC, IEEE transactions on nuclear science, 42(6), 1995, pp. 1829-1836
ELIMINATION OF CHARGE-ENHANCEMENT EFFECTS IN GAAS-FETS WITH A LOW-TEMPERATURE-GROWN GAAS BUFFER LAYER
Authors: MCMORROW D WEATHERFORD TR CURTICE WR KNUDSON AR BUCHNER S MELINGER JS TRAN LH CAMPBELL AB
Citation: D. Mcmorrow et al., ELIMINATION OF CHARGE-ENHANCEMENT EFFECTS IN GAAS-FETS WITH A LOW-TEMPERATURE-GROWN GAAS BUFFER LAYER, IEEE transactions on nuclear science, 42(6), 1995, pp. 1837-1843
PARTICLE-INDUCED MITIGATION OF SEU SENSITIVITY IN HIGH DATA RATE GAASHIGFET TECHNOLOGIES
Authors: MARSHALL PW DALE CJ WEATHERFORD TR LAMACCHIA M LABEL KA
Citation: Pw. Marshall et al., PARTICLE-INDUCED MITIGATION OF SEU SENSITIVITY IN HIGH DATA RATE GAASHIGFET TECHNOLOGIES, IEEE transactions on nuclear science, 42(6), 1995, pp. 1844-1849
SIGNIFICANT REDUCTION IN THE SOFT ERROR SUSCEPTIBILITY OF GAAS FIELD-EFFECT TRANSISTORS WITH A LOW-TEMPERATURE-GROWN GAAS BUFFER LAYER
Authors: WEATHERFORD TR MCMORROW D CAMPBELL AB CURTICE WR
Citation: Tr. Weatherford et al., SIGNIFICANT REDUCTION IN THE SOFT ERROR SUSCEPTIBILITY OF GAAS FIELD-EFFECT TRANSISTORS WITH A LOW-TEMPERATURE-GROWN GAAS BUFFER LAYER, Applied physics letters, 67(5), 1995, pp. 703-705
CHARGE COLLECTION MECHANISMS OF HETEROSTRUCTURE FETS
Authors: MCMORROW D MELINGER JS THANTU N CAMPBELL AB WEATHERFORD TR KNUDSON AR TRAN LH PECZALSKI A
Citation: D. Mcmorrow et al., CHARGE COLLECTION MECHANISMS OF HETEROSTRUCTURE FETS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2055-2062
CRITICAL-EVALUATION OF THE PULSED-LASER METHOD FOR SINGLE EVENT EFFECTS TESTING AND FUNDAMENTAL-STUDIES
Authors: MELINGER JS BUCHNER S MCMORROW D STAPOR WJ WEATHERFORD TR CAMPBELL AB
Citation: Js. Melinger et al., CRITICAL-EVALUATION OF THE PULSED-LASER METHOD FOR SINGLE EVENT EFFECTS TESTING AND FUNDAMENTAL-STUDIES, IEEE transactions on nuclear science, 41(6), 1994, pp. 2574-2584
SEU RATE PREDICTION AND MEASUREMENT OF GAAS SRAMS ONBOARD THE CRRES SATELLITE
Authors: WEATHERFORD TR MCDONALD PT CAMPBELL AB LANGWORTHY JB
Citation: Tr. Weatherford et al., SEU RATE PREDICTION AND MEASUREMENT OF GAAS SRAMS ONBOARD THE CRRES SATELLITE, IEEE transactions on nuclear science, 40(6), 1993, pp. 1463-1470
HEAVY-ION AND PROTON ANALYSIS OF A GAAS C-HIGFET SRAM
Authors: CUTCHIN JH MARSHALL PW WEATHERFORD TR LANGWORTHY J PETERSEN EL CAMPBELL AB HANKA S PECZALSKI A
Citation: Jh. Cutchin et al., HEAVY-ION AND PROTON ANALYSIS OF A GAAS C-HIGFET SRAM, IEEE transactions on nuclear science, 40(6), 1993, pp. 1660-1665
THE SHAPE OF HEAVY-ION UPSET CROSS-SECTION CURVES
Authors: XAPSOS MA WEATHERFORD TR SHAPIRO P
Citation: Ma. Xapsos et al., THE SHAPE OF HEAVY-ION UPSET CROSS-SECTION CURVES, IEEE transactions on nuclear science, 40(6), 1993, pp. 1812-1819
SINGLE EVENT INDUCED CHARGE-TRANSPORT MODELING OF GAAS-MESFETS
Authors: WEATHERFORD TR MCMORROW D CURTICE WR KNUDSON AR CAMPBELL AB
Citation: Tr. Weatherford et al., SINGLE EVENT INDUCED CHARGE-TRANSPORT MODELING OF GAAS-MESFETS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1867-1871
Risultati: 1-15 |