Citation: Wlm. Weerts et al., THE KINETICS OF THE LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF POLYCRYSTALLINE SILICON FROM SILANE, Journal of the Electrochemical Society, 145(4), 1998, pp. 1318-1330
Citation: Wlm. Weerts et al., LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF POLYCRYSTALLINE SILICON - ANALYSIS OF NONUNIFORM GROWTH IN AN INDUSTRIAL-SCALE REACTOR, Journal of the Electrochemical Society, 144(9), 1997, pp. 3213-3221
Citation: Wlm. Weerts et al., THE ADSORPTION OF SILANE, DISILANE AND TRISILANE ON POLYCRYSTALLINE SILICON - A TRANSIENT KINETIC-STUDY, Surface science, 367(3), 1996, pp. 321-339
Citation: Wlm. Weerts et al., A LABORATORY REACTOR FOR KINETIC-STUDIES OF GAS-SOLID REACTIONS AT LOW-PRESSURES - DESIGN AND MODELING IN THE PRESENCE OF IRREDUCIBLE TRANSPORT PHENOMENA, Chemical Engineering Science, 51(11), 1996, pp. 2583-2588
Citation: Wlm. Weerts et al., LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF POLYCRYSTALLINE SILICON - VALIDATION AND ASSESSMENT OF REACTOR MODELS, Chemical Engineering Science, 51(10), 1996, pp. 2109-2118