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Results: 1-9 |
Results: 9
ALUMINUM IMPLANTATION OF P-SIC FOR OHMIC CONTACTS
Authors: SPIESS L NENNEWITZ O WEISHART H LINDNER J SKORUPA W ROMANUS H ERLER F PEZOLDT J
Citation: L. Spiess et al., ALUMINUM IMPLANTATION OF P-SIC FOR OHMIC CONTACTS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1414-1419
ION-BEAM-ASSISTED DEPOSITION OF A TUNGSTEN COMPOUND LAYER ON 6H-SILICON CARBIDE
Authors: WEISHART H HEERA V MATZ W SKORUPA W
Citation: H. Weishart et al., ION-BEAM-ASSISTED DEPOSITION OF A TUNGSTEN COMPOUND LAYER ON 6H-SILICON CARBIDE, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1432-1435
ION-BEAM PROCESSING OF SINGLE-CRYSTALLINE SILICON-CARBIDE
Authors: SKORUPA W HEERA V PACAUD Y WEISHART H
Citation: W. Skorupa et al., ION-BEAM PROCESSING OF SINGLE-CRYSTALLINE SILICON-CARBIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 114-120
ION-BEAM SYNTHESIS BY TUNGSTEN-IMPLANTATION INTO 6H-SILICON CARBIDE
Authors: WEISHART H STEFFEN HJ MATZ W VOELSKOW M SKORUPA W
Citation: H. Weishart et al., ION-BEAM SYNTHESIS BY TUNGSTEN-IMPLANTATION INTO 6H-SILICON CARBIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 338-341
MONOMOLECULAR STEPS OF ULTRA-LOW DENSITY ON (100) GROWTH FACES OF LIQUID-PHASE EPITAXIAL GAAS
Authors: WEISHART H BAUSER E KONUMA M QUEISSER HJ
Citation: H. Weishart et al., MONOMOLECULAR STEPS OF ULTRA-LOW DENSITY ON (100) GROWTH FACES OF LIQUID-PHASE EPITAXIAL GAAS, Journal of crystal growth, 137(3-4), 1994, pp. 335-346
GROWTH-CONDITIONS FOR IMPROVING THE QUALITY OF SEMICONDUCTOR SINGLE-CRYSTAL MATERIAL
Authors: WEISHART H BAUSER E
Citation: H. Weishart et E. Bauser, GROWTH-CONDITIONS FOR IMPROVING THE QUALITY OF SEMICONDUCTOR SINGLE-CRYSTAL MATERIAL, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 173(1-2), 1993, pp. 33-36
MICROTOPOLOGY OF TERRACE RISERS AND TREADS ON SOLUTION-GROWN GAAS(001) VICINAL SURFACES
Authors: MAREK T STRUNK HP WEISHART H BAUSER E
Citation: T. Marek et al., MICROTOPOLOGY OF TERRACE RISERS AND TREADS ON SOLUTION-GROWN GAAS(001) VICINAL SURFACES, Journal of crystal growth, 134(1-2), 1993, pp. 14-18
MORPHOLOGICAL STABILITY DURING GAAS SOLUTION GROWTH - LIQUID-PHASE EPITAXY VERSUS THE TRAVELING HEATER METHOD
Authors: WEISHART H DANILEWSKY AN BENZ KW BAUSER E
Citation: H. Weishart et al., MORPHOLOGICAL STABILITY DURING GAAS SOLUTION GROWTH - LIQUID-PHASE EPITAXY VERSUS THE TRAVELING HEATER METHOD, Journal of crystal growth, 131(1-2), 1993, pp. 17-31
NATURE OF DISLOCATIONS PROMOTING GROWTH IN LIQUID-PHASE EPITAXY OF GALLIUM-ARSENIDE
Authors: MOHLING W WEISHART H BAUSER E
Citation: W. Mohling et al., NATURE OF DISLOCATIONS PROMOTING GROWTH IN LIQUID-PHASE EPITAXY OF GALLIUM-ARSENIDE, Journal of crystal growth, 130(3-4), 1993, pp. 466-474
Risultati: 1-9 |