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Results:
1-12
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Results: 12
Authors:
MOURET I
CALVEL P
ALLENSPACH M
TITUS JL
WHEATLEY CF
LABEL KA
CALVET MC
SCHRIMPF RD
GALLOWAY KF
Citation: I. Mouret et al., MEASUREMENT OF A CROSS-SECTION FOR SINGLE-EVENT GATE RUPTURE IN POWERMOSFETS, IEEE electron device letters, 17(4), 1996, pp. 163-165
Authors:
ALLENSPACH M
BREWS JR
GALLOWAY KE
JOHNSON GH
SCHRIMPF RD
PEASE RL
TITUS JL
WHEATLEY CF
Citation: M. Allenspach et al., SEGR - A UNIQUE FAILURE MODE FOR POWER MOSFETS IN SPACECRAFT, Microelectronics and reliability, 36(11-12), 1996, pp. 1871-1874
Authors:
ALLENSPACH M
DACHS C
JOHNSON GH
SCHRIMPF RD
LORFEVRE E
PALAU JM
BREWS JR
GALLOWAY KF
TITUS JL
WHEATLEY CF
Citation: M. Allenspach et al., SEGR AND SEB IN N-CHANNEL POWER MOSFETS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2927-2931
A PHYSICAL INTERPRETATION FOR THE SINGLE-EVENT-GATE-RUPTURE CROSS-SECTION OF N-CHANNEL POWER MOSFETS
Authors:
JOHNSON GH
GALLOWAY KF
SCHRIMPF RD
TITUS JL
WHEATLEY CF
ALLENSPACH M
DACHS C
Citation: Gh. Johnson et al., A PHYSICAL INTERPRETATION FOR THE SINGLE-EVENT-GATE-RUPTURE CROSS-SECTION OF N-CHANNEL POWER MOSFETS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2932-2937
Authors:
TITUS JL
WHEATLEY CF
ALLENSPACH M
SCHRIMPF RD
BURTON DI
BREWS JR
GALLOWAY KF
PEASE RL
Citation: Jl. Titus et al., INFLUENCE OF ION-BEAM ENERGY ON SEGR FAILURE THRESHOLDS OF VERTICAL POWER MOSFETS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2938-2943
Authors:
WHEATLEY CF
TITUS JL
BURTON DI
CARLEY DR
Citation: Cf. Wheatley et al., SEGR RESPONSE OF A RADIATION-HARDENED POWER MOSFET TECHNOLOGY, IEEE transactions on nuclear science, 43(6), 1996, pp. 2944-2951
Authors:
MOURET I
CALVET MC
CALVEL P
TASTET P
ALLENSPACH M
LABEL KA
TITUS JL
WHEATLEY CF
SCHRIMPF RD
GALLOWAY KF
Citation: I. Mouret et al., EXPERIMENTAL-EVIDENCE OF THE TEMPERATURE AND ANGULAR-DEPENDENCE IN SEGR, IEEE transactions on nuclear science, 43(3), 1996, pp. 936-943
Authors:
TITUS JL
WHEATLEY CF
Citation: Jl. Titus et Cf. Wheatley, EXPERIMENTAL STUDIES OF SINGLE-EVENT GATE RUPTURE AND BURNOUT IN VERTICAL POWER MOSFETS, IEEE transactions on nuclear science, 43(2), 1996, pp. 533-545
Authors:
ALLENSPACH M
MOURET I
TITUS JL
WHEATLEY CF
PEASE RL
BREWS JR
SCHRIMPF RD
GALLOWAY KF
Citation: M. Allenspach et al., SINGLE-EVENT GATE-RUPTURE IN POWER MOSFETS - PREDICTION OF BREAKDOWN BIASES AND EVALUATION OF OXIDE THICKNESS DEPENDENCE, IEEE transactions on nuclear science, 42(6), 1995, pp. 1922-1927
Authors:
TITUS JL
WHEATLEY CF
BURTON DI
MOURET I
ALLENSPACH M
BREWS J
SCHRIMPF R
GALLOWAY K
PEASE RL
Citation: Jl. Titus et al., IMPACT OF OXIDE THICKNESS ON SEGR FAILURE IN VERTICAL POWERMOSFETS - DEVELOPMENT OF A SEMIEMPIRICAL EXPRESSION, IEEE transactions on nuclear science, 42(6), 1995, pp. 1928-1934
Authors:
WHEATLEY CF
TITUS JL
BURTON DI
Citation: Cf. Wheatley et al., SINGLE-EVENT GATE RUPTURE IN VERTICAL POWER MOSFETS - AN ORIGINAL EMPIRICAL EXPRESSION, IEEE transactions on nuclear science, 41(6), 1994, pp. 2152-2159
Authors:
BREWS JR
ALLENSPACH M
SCHRIMPF RD
GALLOWAY KF
TITUS JL
WHEATLEY CF
Citation: Jr. Brews et al., A CONCEPTUAL-MODEL OF SINGLE-EVENT GATE-RUPTURE IN POWER MOSFETS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1959-1966
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1-12
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