Authors: HOLLANDER B VESCAN L MESTERS S WICKENHAUSER S

Citation: B. Hollander et al., STRAIN AND MISFIT DISLOCATION DENSITY IN FINITE LATERAL SIZE SI1-XGEXFILMS GROWN BY SELECTIVE EPITAXY, Thin solid films, 292(1-2), 1997, pp. 213-217

Authors: WICKENHAUSER S VESCAN L SCHMIDT K LUTH H

Citation: S. Wickenhauser et al., DETERMINATION OF THE ACTIVATION-ENERGY FOR THE HETEROGENEOUS NUCLEATION OF MISFIT DISLOCATIONS IN SI1-XGEX SI DEPOSITED BY SELECTIVE EPITAXY/, Applied physics letters, 70(3), 1997, pp. 324-326

Authors: VESCAN L LOO R SOUIFI A DIEKER C WICKENHAUSER S

Citation: L. Vescan et al., STRAINED SI1-XGEX SI DOTS AND WIRES GROWN BY SELECTIVE EPITAXY/, Journal de physique. IV, 5(C5), 1995, pp. 55-62

Authors: VESCAN L LOO R SOUIFI A DIEKER C WICKENHAUSER S

Citation: L. Vescan et al., STRAINED SI1-XGEX SI DOTS AND WIRES GROWN BY SELECTIVE EPITAXY/, Journal de physique. IV, 5(C5), 1995, pp. 55-62

Authors: VESCAN L DIEKER C LOO R APETZ R HARTMANN A WICKENHAUSER S LUTH H

Citation: L. Vescan et al., PROPERTIES OF SI SI1-XGEX QUANTUM DOTS AND WIRES GROWN BY SELECTIVE EPITAXY/, Materials science and technology, 11(4), 1995, pp. 421-424