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Results: 1-12 |
Results: 12
HIGH-PERFORMANCE ZNSE PHOTOCONDUCTORS
Authors: HUANG ZC WIE CR NA I LUO H MOTT DB SHU PK
Citation: Zc. Huang et al., HIGH-PERFORMANCE ZNSE PHOTOCONDUCTORS, Electronics Letters, 32(16), 1996, pp. 1507-1509
INTERFACE STRUCTURE IN LATTICE-MATCHED III-V HETEROSTRUCTURES BY HIGH-RESOLUTION X-RAY-DIFFRACTION
Authors: WIE CR
Citation: Cr. Wie, INTERFACE STRUCTURE IN LATTICE-MATCHED III-V HETEROSTRUCTURES BY HIGH-RESOLUTION X-RAY-DIFFRACTION, Journal of the Korean Physical Society, 28, 1995, pp. 52-59
ROLE OF CADMIUM VACANCY-RELATED DEFECTS IN CDTE NUCLEAR-DETECTORS
Authors: HUANG ZC EISSLER E WIE CR
Citation: Zc. Huang et al., ROLE OF CADMIUM VACANCY-RELATED DEFECTS IN CDTE NUCLEAR-DETECTORS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 100(4), 1995, pp. 507-510
RELATION BETWEEN PHASE-STABILITY AND MECHANICAL DEFECTS IN INGA(AL)ASGAAS AND ZNSE/GAAS HETEROSTRUCTURES UNDER PRESSURE/
Authors: RITTER TM WEINSTEIN BA KIM HM WIE CR STAIR K CHOIFENG C FUNATO M
Citation: Tm. Ritter et al., RELATION BETWEEN PHASE-STABILITY AND MECHANICAL DEFECTS IN INGA(AL)ASGAAS AND ZNSE/GAAS HETEROSTRUCTURES UNDER PRESSURE/, Journal of physics and chemistry of solids, 56(3-4), 1995, pp. 607-613
PHOSPHORUS-VACANCY-RELATED DEEP LEVELS IN GAINP LAYERS
Authors: HUANG ZC WIE CR VARRIANO JA KOCH MW WICKS GW
Citation: Zc. Huang et al., PHOSPHORUS-VACANCY-RELATED DEEP LEVELS IN GAINP LAYERS, Journal of applied physics, 77(4), 1995, pp. 1587-1590
INTERFACE TRAPS IN INP INALGAAS P-N-JUNCTIONS BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/
Authors: HUANG ZC WIE CR CHEN JC DAVIS G
Citation: Zc. Huang et al., INTERFACE TRAPS IN INP INALGAAS P-N-JUNCTIONS BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/, Journal of applied physics, 77(11), 1995, pp. 5736-5738
HIGH-RESOLUTION X-RAY-DIFFRACTION CHARACTERIZATION OF SEMICONDUCTOR STRUCTURES
Authors: WIE CR
Citation: Cr. Wie, HIGH-RESOLUTION X-RAY-DIFFRACTION CHARACTERIZATION OF SEMICONDUCTOR STRUCTURES, Materials science & engineering. R, Reports, 13(1), 1994, pp. 1-56
IMPROVEMENT OF GAAS ALGAAS QUANTUM-WELL LASER-DIODES BY RAPID THERMALANNEALING/
Authors: XIE K WIE CR VARRIANO JA WICKS GW
Citation: K. Xie et al., IMPROVEMENT OF GAAS ALGAAS QUANTUM-WELL LASER-DIODES BY RAPID THERMALANNEALING/, Journal of electronic materials, 23(1), 1994, pp. 1-6
CONTACT-RELATED DEEP STATES IN THE AL-GAINP GAAS INTERFACE/
Authors: HUANG ZC WIE CR
Citation: Zc. Huang et Cr. Wie, CONTACT-RELATED DEEP STATES IN THE AL-GAINP GAAS INTERFACE/, Journal of applied physics, 75(2), 1994, pp. 989-993
STUDY OF MSM PHOTODETECTOR FABRICATED ON POROUS SILICON
Authors: YU LZ WIE CR
Citation: Lz. Yu et Cr. Wie, STUDY OF MSM PHOTODETECTOR FABRICATED ON POROUS SILICON, Sensors and actuators. A, Physical, 39(3), 1993, pp. 253-257
SEMIINSULATING PROPERTIES AND PHOTOLUMINESCENCE QUENCHING IN CU-DIFFUSED INP
Authors: XIE K WIE CR
Citation: K. Xie et Cr. Wie, SEMIINSULATING PROPERTIES AND PHOTOLUMINESCENCE QUENCHING IN CU-DIFFUSED INP, Journal of applied physics, 74(7), 1993, pp. 4546-4550
EFFECTS OF LATTICE MISMATCH AND THERMAL ANNEALING ON DEEP TRAPS AND INTERFACE STATES IN GA0.92IN0.08AS(N+) GAAS(P) HETEROJUNCTIONS/
Authors: HUANG ZC WIE CR JOHNSTONE DK STUTZ CE EVANS KR
Citation: Zc. Huang et al., EFFECTS OF LATTICE MISMATCH AND THERMAL ANNEALING ON DEEP TRAPS AND INTERFACE STATES IN GA0.92IN0.08AS(N+) GAAS(P) HETEROJUNCTIONS/, Journal of applied physics, 73(9), 1993, pp. 4362-4366
Risultati: 1-12 |